Search Results1-20 of  69

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  • Shibahara Kentaro ID: 9000025120522

    Articles in CiNii:1

    • Effects of Si/Ni composition ratio of NixSiy gate electrode and Hf/Si composition ratio of Hf-based high-k insulator on threshold voltage controllability and mobility of metal-oxide-semiconductor field-effect transistors (2010)
  • SHIBAHARA Kentaro ID: 1000050274139

    Research Institute for Nanodevices and Bio Systems, Hiroshima University:Graduate School of Advanced Sciences of Matter, Hiroshima University (2009 from CiNii)

    Articles in CiNii:23

    • Influence of Wafer Storage Environment on MOS Device Characteristics (2002)
    • Estimation of Nitrogen Ion Energy in Sterilization Technology by Plasma Based Ion Implantation (2005)
    • Laser Annealing Process for ULSI Technology (2005)
  • SHIBAHARA Kentaro ID: 9000001496631

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:2

    • Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation (2005)
    • An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors (2004)
  • SHIBAHARA Kentaro ID: 9000002167353

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate (2004)
  • SHIBAHARA Kentaro ID: 9000002167545

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Precise Depth Profiling of Sub-keV Implanted Arsenic (2004)
  • SHIBAHARA Kentaro ID: 9000002171268

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Function of Phase Switch Layer for Ultra Shallow Junction Formation by Green Laser Annealing (2005)
  • SHIBAHARA Kentaro ID: 9000002172335

    Research Center for Nanodevices and Systems, Hiroshima University (2006 from CiNii)

    Articles in CiNii:1

    • Pd_2Si Fully-Silicided Gate : Kinetics of Silicide Formation and Workfunction Tuning (2006)
  • SHIBAHARA Kentaro ID: 9000002177401

    Graduate School of Advanced Sciences of Matter, Hiroshima University (2007 from CiNii)

    Articles in CiNii:1

    • Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process (2007)
  • SHIBAHARA Kentaro ID: 9000004816618

    The Reserch Center for Nanodevices and Systems, Hiroshima University (2002 from CiNii)

    Articles in CiNii:9

    • Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process (1997)
    • High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips (1995)
    • Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO_2/Si Interface (1999)
  • SHIBAHARA Kentaro ID: 9000004825509

    Research Center for Nanodevices and Systems, Hiroshima University (2002 from CiNii)

    Articles in CiNii:1

    • Ultra-Shallow Junction Formation with Antimony Implantation (2002)
  • SHIBAHARA Kentaro ID: 9000005743320

    Research Center for Nanodevices and Systems, Hiroshima University (1999 from CiNii)

    Articles in CiNii:1

    • Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors (1999)
  • SHIBAHARA Kentaro ID: 9000016261795

    Research Center for Nanodevices and Systems, Hiroshima University (2007 from CiNii)

    Articles in CiNii:1

    • Gate-Extension Overlap Control by Sb Tilt Implantation (2007)
  • SHIBAHARA Kentaro ID: 9000017400613

    広大 (2010 from CiNii)

    Articles in CiNii:3

    • Silicon technology (2010)
    • A 1-Gb DRAM for File Applications (1995)
    • Workfunction Tuning of B Doped Fully-Silicided Pd_2Si Gate (2007)
  • SHIBAHARA Kentaro ID: 9000020196508

    Department of Electrical Engineering, Kyoto University (1989 from CiNii)

    Articles in CiNii:1

    • A nondestructive analysis of surface layer by soft X-ray spectroscopy. (1989)
  • SHIBAHARA Kentaro ID: 9000107317345

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Ultra-Shallow Junction Formation by Green-Laser Annealing with Light Absorber (2005)
  • SHIBAHARA Kentaro ID: 9000107335828

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch (2003)
  • SHIBAHARA Kentaro ID: 9000107341455

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate (2005)
  • SHIBAHARA Kentaro ID: 9000107343658

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As^+ Implantation (2005)
  • SHIBAHARA Kentaro ID: 9000107356382

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Source/Drain Formation Process (2003)
  • SHIBAHARA Kentaro ID: 9000107366730

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Sheet Resistance Reduction and Crystallinity Improvement in Ultrashallow n^+/p Junctions by Heat-Assisted Excimer Laser Annealing (2005)
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