Search Results41-60 of  69

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  • Shibahara Kentaro ID: 9000258179090

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Ultra-Shallow Junction Formation by Green-Laser Annealing with Light Absorber (2005)
  • Shibahara Kentaro ID: 9000258180612

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation (2005)
  • Shibahara Kentaro ID: 9000258181271

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Accuracy of Secondary Ion Mass Spectrometry Depth Profiling for Sub-keV As+ Implantation (2005)
  • Shibahara Kentaro ID: 9000258182549

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate (2005)
  • Shibahara Kentaro ID: 9000267783335

    Articles in CiNii:1

    • Merits of Heat Assist for Melt Laser Annealing (2006)
  • Shibahara Kentaro ID: 9000392691441

    Articles in CiNii:1

    • Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC (1984)
  • Shibahara Kentaro ID: 9000392697172

    Articles in CiNii:1

    • Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition (1987)
  • Shibahara Kentaro ID: 9000392709333

    Department of Electrical Engineering, Kyoto University (1989 from CiNii)

    Articles in CiNii:1

    • Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition (1989)
  • Shibahara Kentaro ID: 9000392711047

    Articles in CiNii:1

    • Plasma Etching of CVD Grown Cubic SiC Single Crystals (1985)
  • Shibahara Kentaro ID: 9000401596473

    Articles in CiNii:1

    • Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC (1984)
  • Shibahara Kentaro ID: 9000401598764

    Articles in CiNii:1

    • Plasma Etching of CVD Grown Cubic SiC Single Crystals (1985)
  • Shibahara Kentaro ID: 9000401604218

    Articles in CiNii:1

    • Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition (1987)
  • Shibahara Kentaro ID: 9000401611516

    Articles in CiNii:1

    • Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition (1989)
  • Shibahara Kentaro ID: 9000401655401

    Articles in CiNii:1

    • Optically Interconnected Kohonen Net for Pattern Recognition (1996)
  • Shibahara Kentaro ID: 9000401660250

    Articles in CiNii:1

    • High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips (1996)
  • Shibahara Kentaro ID: 9000401662718

    Articles in CiNii:1

    • High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits (1997)
  • Shibahara Kentaro ID: 9000401675010

    Articles in CiNii:1

    • New Ar-Plasma Cleaning Process for Reduction of Al/TiSi2Contact Resistance (1998)
  • Shibahara Kentaro ID: 9000401679949

    Articles in CiNii:1

    • 1999-04-30 (1999)
  • Shibahara Kentaro ID: 9000401681555

    Articles in CiNii:1

    • Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors (1999)
  • Shibahara Kentaro ID: 9000401688424

    Articles in CiNii:1

    • Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO2/Si Interface (2000)
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