Search Results1-7 of  7

  • SHIGA Katsuya ID: 9000001496368

    Renesas Technology Corporation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • SHIGA Katsuya ID: 9000004874883

    Mitsubishi Electric Corporation, ULSI Development Center, Evaluation & Analysis Department (1999 from CiNii)

    Articles in CiNii:1

    • Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide (1999)
  • SHIGA Katsuya ID: 9000004960188

    Mitsubishi Electric Corporation, ULSI Development Center (1998 from CiNii)

    Articles in CiNii:1

    • Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide (1998)
  • SHIGA Katsuya ID: 9000107351033

    Renesas Technology Corp. (2007 from CiNii)

    Articles in CiNii:1

    • V_<ox>/E_<ox>-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress (2007)
  • Shiga Katsuya ID: 9000025088928

    Articles in CiNii:1

    • High soft-error tolerance body-tied silicon-on-insulator technology with partial trench isolation (2008)
  • Shiga Katsuya ID: 9000258180439

    Renesas Technology Corperation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • Shiga Katsuya ID: 9000401735498

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
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