Search Results1-20 of  45

  • 1 / 3
  • SHINOHARA Hirofumi ID: 9000397850002

    Articles in CiNii:1

    • Compensation of Temperature Induced Flipping-Bits in CMOS SRAM PUF by NMOS Body-Bias (情報セキュリティ) (2018)
  • SHINOHARA Hirofumi ID: 9000397850891

    Articles in CiNii:1

    • Compensation of Temperature Induced Flipping-Bits in CMOS SRAM PUF by NMOS Body-Bias (技術と社会・倫理) (2018)
  • SHINOHARA Hirofumi ID: 9000397852038

    Articles in CiNii:1

    • Compensation of Temperature Induced Flipping-Bits in CMOS SRAM PUF by NMOS Body-Bias (ハードウェアセキュリティ) (2018)
  • SHINOHARA HIROFUMI ID: 9000020601248

    Kumamoto University (1977 from CiNii)

    Articles in CiNii:1

    • A STUDY OF THE GROUP PROCESS OF THE PM-SENSITIVITY DEVELOPMENT PROGRAM:In Relation to the Meeting Attractiveness and the Cogntive Discrepancy between Self-rating and Rating-by-others on Discussion Group (1977)
  • SHINOHARA HIROFUMI ID: 9000020603848

    Kumamoto University (1974 from CiNii)

    Articles in CiNii:1

    • REANALYSIS OF MEASUREMENT SCALE OF PM-LEADERSHIP PATTERN (1974)
  • SHINOHARA HIROFUMI ID: 9000020603863

    Kumamoto University (1977 from CiNii)

    Articles in CiNii:1

    • MEASUREMENT OF LEADERSHIP BEHAVIOR OF ADMINISTRATIVE MANAGERS AND SUPERVISORS IN LOCAL GOVERNMENT OFFICES (1977)
  • SHINOHARA HIROFUMI ID: 9000020611020

    Kumamoto University (1974 from CiNii)

    Articles in CiNii:1

    • EFFECT OF P-M LEADERSHIP BEHAVIOR PATTERNS UPON PERFORMANCE FACTORS IN PERCEPTUALMOTOR LEARNING (I) (1974)
  • SHINOHARA Hirofumi ID: 1000020040066

    熊本大学教育学部 (2003 from CiNii)

    Articles in CiNii:55

    • 討議集団におけるPM機能評定尺度作成の試み (1969)
    • 教育心理学における質的データの解析法--汎用統計パッケージによる頻度データの解析 (日本教育心理学会第40回総会概要) -- (研究委員会企画シンポジウム) (1998)
    • 職場 (安全教育を考える<特集>) -- (安全教育の場面) (1977)
  • SHINOHARA Hirofumi ID: 9000001923383

    Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A simulation study of a HVDC system for remote island power transmission with a diode rectifier and a self-commutated inverter (2001)
  • SHINOHARA Hirofumi ID: 9000002547214

    Articles in CiNii:15

    • Maximum Likelihood Test, x^2 Test and Residual Analysis in Three-Dimensional-Contingency Tables (2000)
    • The Influence of Parent's Leadership Behabvior toward Children upon their Need for Achievement, Motivation for Learning and Dissatisfaction with School (1987)
    • Analysis of Covariance for Split-Plot Factorial pq・r design (COV pq・r design) (1986)
  • SHINOHARA Hirofumi ID: 9000004813344

    Headquarters, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • A Design of High-Speed 4-2 Compressor for Fast Multiplier (1996)
  • SHINOHARA Hirofumi ID: 9000005903282

    Device Business Group, Oki Electric Industry Co., Ltd. (2000 from CiNii)

    Articles in CiNii:2

    • New Stand-By Degradation Mode in n-MOSFET's with Thin Gate Oxide (1999)
    • New Standby Degradation Mode in n-Channel MOSFETs with Thin Gate Oxide (2000)
  • SHINOHARA Hirofumi ID: 9000006210229

    Toshiba Corp. (2010 from CiNii)

    Articles in CiNii:16

    • 直流から交流,さらに直流へ (1996)
    • Analysis of the action of wind turbine generator controlled by static Scherbius system in the islanding power system (2004)
    • A Study of Isolated Operation of a Microgrid Configured with New Energy Generators (2007)
  • SHINOHARA Hirofumi ID: 9000006394448

    Renesas Technology Corporation (2008 from CiNii)

    Articles in CiNii:2

    • A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology (2008)
    • A 65nm Embedded SRAM with Wafer Level Burn-In Mode, Leak-Bit Redundancy and E-trim Fuse for Known Good Die (2007)
  • SHINOHARA Hirofumi ID: 9000016801774

    TOSHIBA CORPORATION (2004 from CiNii)

    Articles in CiNii:1

    • Originated as DC Power Supply, Popularized as AC Power Supply, and DC Power Supply-Era Now Again (2004)
  • SHINOHARA Hirofumi ID: 9000017683682

    Renesas Technology Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Analytical Model of Static Noise Margin in CMOS SRAM for Variation Consideration (2008)
  • SHINOHARA Hirofumi ID: 9000107316672

    Semiconductor Technology Academic Research Center (STARC) (2012 from CiNii)

    Articles in CiNii:1

    • Device-Circuit Interactions in Extremely Low Voltage CMOS Designs (2012)
  • SHINOHARA Hirofumi ID: 9000240238597

    Low-power Electronics Association & Project (2014 from CiNii)

    Articles in CiNii:5

    • Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications (2012)
    • Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications (2012)
    • Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V (2013)
  • SHINOHARA Hirofumi ID: 9000253575435

    Toshiba Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Stability of a Cable-in-Conduit Conductor Cooled by Supercritical Helium below 4.2K. (1994)
  • SHINOHARA Hirofumi ID: 9000283335343

    Semiconductor Technology Academic Research Center (STARC) (2014 from CiNii)

    Articles in CiNii:1

    • Extremely Low Power Digital and Analog Circuits (2014)
  • 1 / 3
Page Top