Search Results1-8 of  8

  • SHIOYA Yoshimi ID: 9000005916623

    Semiconductor Process Laboratory Co., Ltd. (2004 from CiNii)

    Articles in CiNii:2

    • Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases (2004)
    • Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy (2001)
  • SHIOYA Yoshimi ID: 9000020310168

    Fujitsu Ltd. (1983 from CiNii)

    Articles in CiNii:1

    • Evaluation of W-Si Films Formed by Plasma CVD (1983)
  • SHIOYA Yoshimi ID: 9000107341464

    Semiconductor Process Laboratory Co., Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor (2005)
  • Shioya Yoshimi ID: 9000025037084

    Articles in CiNii:1

    • Analysis of stress in plasma enhanced chemical vapor deposition silicon nitride film irradiated with ultraviolet light (2008)
  • Shioya Yoshimi ID: 9000078166403

    Articles in CiNii:1

    • Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing (2006)
  • Shioya Yoshimi ID: 9000258182428

    Semiconductor Process Laboratory Co., Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor (2005)
  • Shioya Yoshimi ID: 9000401703549

    Articles in CiNii:1

    • Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy (2001)
  • Shioya Yoshimi ID: 9000401737616

    Articles in CiNii:1

    • Low-kSiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor (2005)
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