Search Results1-9 of  9

  • Soejima Narumasa ID: 9000025016818

    Articles in CiNii:1

    • Electrical properties of metal-insulator-semiconductor capacitors on freestanding GaN substrate (Special issue: Solid state devices and materials) (2010)
  • Soejima Narumasa ID: 9000025121038

    Articles in CiNii:1

    • A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor (2007)
  • SOEJIMA Narumasa ID: 9000004776765

    TOYOTA Central R&D Labs., Inc. (2007 from CiNii)

    Articles in CiNii:9

    • A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator (2005)
    • A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs (2006)
    • Development of a Vertical GaN Power Device (2007)
  • SOEJIMA Narumasa ID: 9000016372933

    Toyota Central R&D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • SOEJIMA Narumasa ID: 9000238255266

    Toyota Central R&D Labs., Inc. (2012 from CiNii)

    Articles in CiNii:1

    • 4H-SiC Trench MOSFET with Thick Bottom Oxide (2012)
  • SOEJIMA Narumasa ID: 9000248236134

    Toyota Central R&D Labs., Inc. (2012 from CiNii)

    Articles in CiNii:1

    • 4H-SiC Trench MOSFET with Thick Bottom Oxide (2012)
  • Soejima Narumasa ID: 9000401564055

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • Soejima Narumasa ID: 9000401765751

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor (2007)
  • Soejima Narumasa ID: 9000401786897

    Articles in CiNii:1

    • 2010-04-20 (2010)
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