Search Results1-20 of  38

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  • Sogawa Tetsuomi ID: 9000025029552

    Articles in CiNii:1

    • Photoluminescence dynamics of GaAs/AlAs quantum wells modulated by surface acoustic waves (2007)
  • Sogawa Tetsuomi ID: 9000025035848

    Articles in CiNii:1

    • Bending at thinned GaAs nodes in GaP-based free-standing nanowires (2007)
  • SOGAWA Tetsuomi ID: 9000002171734

    NTT Basic Research Laboratories, NTT Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves (2006)
  • SOGAWA Tetsuomi ID: 9000002177154

    NTT Basic Research Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:3

    • InP Nodes in GaP-based Free-standing Nanowires on Si(111) (2007)
    • <110>-Oriented In_<0.04>Ga_<0.96>As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode (2010)
    • Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode (2012)
  • SOGAWA Tetsuomi ID: 9000005546015

    NTT Basic Research Laboratories (2000 from CiNii)

    Articles in CiNii:2

    • Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers (1995)
    • GaAs Photonic Crystals on SiO2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding (2000)
  • SOGAWA Tetsuomi ID: 9000005716802

    NTT Basic Research Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching (1997)
  • SOGAWA Tetsuomi ID: 9000014606510

    Articles in CiNii:7

    • Time-resolved observation of surface photovoltage effect on GaAs surface with high-order harmonic pulse source (2010)
    • Magneto-Optic Imaging of Electron-Spin Dynamics in Semiconductors Modulated by Surface Acoustic Waves (2012)
    • High-precision optical-frequency dissemination using optical fiber networks (2019)
  • SOGAWA Tetsuomi ID: 9000016377203

    NTT Basic Research Laboratories, NTT Corporation (2009 from CiNii)

    Articles in CiNii:1

    • Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation (2009)
  • SOGAWA Tetsuomi ID: 9000107341866

    NTT Basic Research Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate (2008)
  • Sogawa Tetsuomi ID: 9000051524958

    Articles in CiNii:1

    • Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate (2010)
  • Sogawa Tetsuomi ID: 9000067476999

    Articles in CiNii:1

    • Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source (2012)
  • Sogawa Tetsuomi ID: 9000252985263

    NTT Basic Research Laboratories (1993 from CiNii)

    Articles in CiNii:1

    • GaAs/AlAs Trench-Buried Quantum Wires (<20 nm ×20 nm) Fabricated by Metalorganic Chemical Vapor Deposition on Nonplanar Substrates (1993)
  • Sogawa Tetsuomi ID: 9000258128992

    NTT Basic Research Laboratories, 3–1, Morinosato–Wakamiya, Atsugi–Shi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers. (1995)
  • Sogawa Tetsuomi ID: 9000258134378

    NTT Basic Research Laboratories, 3–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching. (1997)
  • Sogawa Tetsuomi ID: 9000388531547

    NTT Basic Research Laboratories (2017 from CiNii)

    Articles in CiNii:1

    • Development of a transpotable Strontium optical lattice clock (2017)
  • Sogawa Tetsuomi ID: 9000392725451

    Articles in CiNii:1

    • GaAs/AlAs Trench-Buried Quantum Wires (<20 nm ×20 nm) Fabricated by Metalorganic Chemical Vapor Deposition on Nonplanar Substrates (1993)
  • Sogawa Tetsuomi ID: 9000398965676

    NTT BRL (2017 from CiNii)

    Articles in CiNii:1

    • Optical freuqency transfer for optical lattice clock network between NTT, Univ. of Tokyo, and RIKEN (2017)
  • Sogawa Tetsuomi ID: 9000401564814

    Articles in CiNii:1

    • Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate (2008)
  • Sogawa Tetsuomi ID: 9000401566029

    Articles in CiNii:1

    • Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation (2009)
  • Sogawa Tetsuomi ID: 9000401569067

    Articles in CiNii:1

    • 2010-10-01 (2010)
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