Search Results1-20 of  107

  • Subramaniam H. ID: 9000009327622

    Articles in CiNii:1

    • インドにおける知的所有権法の状況 (2001)
  • Subramaniam Capt. K. ID: 9000010269166

    Articles in CiNii:1

    • マレーシアの港を国内の玄関港から国際的なハブ港へと転換するか (2006)
  • Subramaniam Vellayan ID: 9000010528788

    Articles in CiNii:1

    • Molecular diversity and phylogeography of the Asian leopard cat, Felis bengalensis, inferred from mitochondrial and Y-chromosomal DNA sequences (2008)
  • Ananthan Subramaniam ID: 9000010727099

    Articles in CiNii:1

    • Synthesis of pyrimidines and condensed pyrimidines through reactions of nitriles with o-aminocarbonyl substrates under acidic conditions (2009)
  • Balakumar Subramaniam ID: 9000015633898

    Articles in CiNii:1

    • 銅めっき配線層のCMP (特集 半導体プロセス技術のイノベーション) -- (CMP関連技術の最新トピックスを追う) (2003)
  • Arulkumaran Subramaniam ID: 9000241877164

    Articles in CiNii:1

    • Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (2013)
  • Yugeswaran Subramaniam ID: 9000281375096

    Articles in CiNii:1

    • Metal Hard Coatings on Plastic Materials Using Gas Tunnel Type Plasma Spraying (2014)
  • Subramaniam Suresh ID: 9000398960766

    Articles in CiNii:1

    • CLINICAL INVESTIGATION : Three dimensional neuro-retinal rim thickness and retinal nerve fiber layer thickness using high-definition optical coherence tomography for open-angle glaucoma (2018)
  • ARULKUMARAN Subramaniam ID: 9000018820162

    Temasek Laboratories, Nanyang Technological University (2011 from CiNii)

    Articles in CiNii:1

    • Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si (2011)
  • ARULKUMARAN Subramaniam ID: 9000107341999

    Monolithic Microwave Integrated Circuit Design Center, Temasek Laboratories, Nanyang Technological University (2009 from CiNii)

    Articles in CiNii:1

    • Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111) (2009)
  • ARULKUMARAN Subramaniam ID: 9000107343411

    Research Center for Nano-Device and System, Nagoya Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors (2005)
  • ARULKUMARAN Subramaniam ID: 9000107346419

    Research Center for Nano-Device and System, Nagoya Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy (2004)
  • ARULKUMARAN Subramaniam ID: 9000107355372

    Temasek Laboratories@NTU, Nanyang Technological University (2011 from CiNii)

    Articles in CiNii:1

    • Improved Power Device Figure-of-Merit (4.0 x 10^8V^2Ω^<-1>cm^<-2>) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si (2011)
  • ARULKUMARAN Subramaniam ID: 9000107365139

    Temasek Laboratories, Nanyang Technological University (2012 from CiNii)

    Articles in CiNii:1

    • Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy (2012)
  • ARULKUMARAN Subramaniam ID: 9000248242124

    Temasek Laboratories@NTU, Nanyang Technological University (2013 from CiNii)

    Articles in CiNii:1

    • Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack (2013)
  • Arulkumaran Subramaniam ID: 9000024934786

    Articles in CiNii:1

    • Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate (2012)
  • Arulkumaran Subramaniam ID: 9000258151527

    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N. (2000)
  • Arulkumaran Subramaniam ID: 9000258154641

    Research Centre for Microstructure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan (2001 from CiNii)

    Articles in CiNii:1

    • High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate. (2001)
Page Top