Search Results1-20 of  283

  • Suemasu Takashi ID: 9000025032542

    Articles in CiNii:1

    • Epitaxial growth and magnetic properties of Fe3Si/CaF2/Fe3Si tunnel junction structures on CaF2/Si(111) (2007)
  • Suemasu Takashi ID: 9000025033139

    Articles in CiNii:1

    • Growth of nitride-based Fe3N/AlN/Fe4N magnetic tunnel junction structures on Si(111) substrates (2007)
  • Suemasu Takashi ID: 9000403263776

    Articles in CiNii:1

    • Fabrication of L1₀-FeNi films by denitriding FeNiN films (2019)
  • SUEMASU Takashi ID: 9000001287576

    Central Research Institute, Mitsubishi Materials Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy of Highly [100]-Oriented β-FeSi_2 Films on Lattice-Matched Strained-Si(001) Surface Using Si_<0.7>Ge_<0.3> Layers (2004)
  • SUEMASU Takashi ID: 9000001534133

    Institute of Applied Physics, University of Tsukuba (2005 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy (2005)
  • SUEMASU Takashi ID: 9000001779025

    Institute of Applied Physics, University of Tsukuba (2006 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers (2006)
  • SUEMASU Takashi ID: 9000002168331

    Institute of Applied Physics, University of Tsukuba (2004 from CiNii)

    Articles in CiNii:2

    • Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy (2004)
    • Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy (2004)
  • SUEMASU Takashi ID: 9000004778163

    Department of Electrical & Electronic Eng. Tokyo Institute of Technology:Institute of Materials Science., Univ. of Tsukuba (1996 from CiNii)

    Articles in CiNii:3

    • Metal/insulator heterostructure electron devices. (1994)
    • Quantum-Effect Electron Devices Using Metal(CoSi_2)/Insulator(CaF_2)/Si Heterostructures (1996)
    • Analysis of Metal(CoSi_2)/Insulator(Caf_2)Resonant Tunneling Hot Electron Transistor Using Eqivalent Circuit (1994)
  • SUEMASU Takashi ID: 9000006139729

    Articles in CiNii:2

    • シリサイド半導体の応用 (特集 シリサイド半導体の最新動向) (2005)
    • CS-12-8 Expectation to the Silicon-Based Nano-Photonics (2005)
  • SUEMASU Takashi ID: 9000016378083

    Institute of Applied Physics, University of Tsukuba (2009 from CiNii)

    Articles in CiNii:1

    • CaF_2/Fe_3Si/CaF_2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy (2009)
  • SUEMASU Takashi ID: 9000017504505

    Institute of Applied Physics, University of Tsukuba (2010 from CiNii)

    Articles in CiNii:10

    • Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide (2007)
    • Improved Room-Temperature 1.6μm Electroluminescence from p-Si/β-FeSi_2/n-Si Double Heterostructures Light-Emitting Diodes (2008)
    • Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi_2 with Impurities Grown by Molecular Beam Epitaxy (2008)
  • SUEMASU Takashi ID: 9000018672533

    Institute of Applied Physics, University of Tsukuba:Japan Science and Technology Angency, CREST (2011 from CiNii)

    Articles in CiNii:2

    • Toward Silicide-based solar cells and spintronics (2011)
    • Toward Silicide-based solar cells and spintronics (2011)
  • SUEMASU Takashi ID: 9000046255009

    Institute of Applied Physics, University of Tsukuba (2000 from CiNii)

    Articles in CiNii:1

    • Room Temperature 1.6μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region (2000)
  • SUEMASU Takashi ID: 9000107338588

    Articles in CiNii:1

    • Influence of AIN Growth Conditions on the Polarity of GaN Grown on AIN/Si(111) by Metalorganic Molecular Beam Epitaxy (2004)
  • SUEMASU Takashi ID: 9000107341741

    Institute of Applied Physics, University of Tsukuba (2005 from CiNii)

    Articles in CiNii:1

    • Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy (2005)
  • SUEMASU Takashi ID: 9000107343781

    Institute of Applied Physics, University of Tsukuba (2005 from CiNii)

    Articles in CiNii:1

    • Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy (2005)
  • SUEMASU Takashi ID: 9000107347478

    Institute of Applied Physics, University of Tsukuba (2004 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Semiconducting BaSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy (2004)
  • SUEMASU Takashi ID: 9000107350231

    Institute of Applied Physics, University of Tsukuba (2004 from CiNii)

    Articles in CiNii:1

    • Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy (2004)
  • SUEMASU Takashi ID: 9000107355785

    Institute of Materials Science, University of Tsukuba (1997 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Layers on Si(001) Substrates (1997)
  • SUEMASU Takashi ID: 9000107361559

    Center for Tsukuba Advanced Research Alliance (2004 from CiNii)

    Articles in CiNii:1

    • Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emitting Diode with β-FeSi_2 Active Region (2004)
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