Search Results1-20 of  266

  • SUEMASU Takashi ID: 9000404508291

    Institute of Applied Physics, University of Tsukuba|PRESTO, Japan Science and Technology Agency (2007 from CiNii)

    Articles in CiNii:1

    • Current status and future prospects of semiconducting alkaline-earth-metal silicides (2007)
  • Suemasu Takashi ID: 9000025032542

    Articles in CiNii:1

    • Epitaxial growth and magnetic properties of Fe3Si/CaF2/Fe3Si tunnel junction structures on CaF2/Si(111) (2007)
  • Suemasu Takashi ID: 9000025033139

    Articles in CiNii:1

    • Growth of nitride-based Fe3N/AlN/Fe4N magnetic tunnel junction structures on Si(111) substrates (2007)
  • Suemasu Takashi ID: 9000403263776

    Articles in CiNii:1

    • Fabrication of L1₀-FeNi films by denitriding FeNiN films (2019)
  • Suemasu Takashi ID: 9000403850479

    Articles in CiNii:1

    • Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2 (2007)
  • Suemasu Takashi ID: 9000403850486

    Articles in CiNii:1

    • Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy (2007)
  • Suemasu Takashi ID: 9000403850643

    Articles in CiNii:1

    • Growth of highly oriented crystalline α-Fe/AlN/Fe3N trilayer structures on Si(1 1 1) substrates by molecular beam epitaxy (2007)
  • Suemasu Takashi ID: 9000403852210

    Articles in CiNii:1

    • Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy (2008)
  • Suemasu Takashi ID: 9000403855271

    Articles in CiNii:1

    • p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature (2009)
  • Suemasu Takashi ID: 9000403856159

    Articles in CiNii:1

    • Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application (2009)
  • Suemasu Takashi ID: 9000403857870

    Articles in CiNii:1

    • p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature (2009)
  • Suemasu Takashi ID: 9000403864337

    Articles in CiNii:1

    • Molecular beam epitaxy of ferromagnetic γ′-Fe4N thin films on LaAlO3(1 0 0), SrTiO3(1 0 0) and MgO(1 0 0) substrates (2011)
  • Suemasu Takashi ID: 9000403864803

    Articles in CiNii:1

    • Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy (2011)
  • Suemasu Takashi ID: 9000403865142

    Articles in CiNii:1

    • X-ray magnetic circular dichroism of ferromagnetic Co4N epitaxial films on SrTiO3(001) substrates grown by molecular beam epitaxy (2011)
  • Suemasu Takashi ID: 9000403865502

    Articles in CiNii:1

    • Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates (2011)
  • Suemasu Takashi ID: 9000403865504

    Articles in CiNii:1

    • Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells (2011)
  • Suemasu Takashi ID: 9000403865518

    Articles in CiNii:1

    • Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy (2011)
  • Suemasu Takashi ID: 9000403866283

    Articles in CiNii:1

    • Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells (2012)
  • Suemasu Takashi ID: 9000403866292

    Articles in CiNii:1

    • Molecularbeamepitaxy of BaSi2thinfilms on Si(001) substrates (2012)
  • Suemasu Takashi ID: 9000403866795

    Articles in CiNii:1

    • Investigation of grainboundaries in BaSi2epitaxialfilms on Si(1 1 1) substrates using transmissionelectronmicroscopy and electron-beam-induced current technique (2012)
Page Top