Search Results1-20 of  107

  • Suezawa Masashi ID: 9000025014899

    Articles in CiNii:1

    • Annihilation of Acceptor-Hydrogen Pairs in Si Crystals Due to Electron Irradiation (2006)
  • SUEZAWA Masashi ID: 9000001501241

    Graduate School of Integrated Science, Yokohama City University (2005 from CiNii)

    Articles in CiNii:1

    • Vacancy Formation Energy at Metal-Silicon Interface Region (2005)
  • SUEZAWA Masashi ID: 9000001717379

    Institute for Materials Research, Tohoku University (1997 from CiNii)

    Articles in CiNii:1

    • Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon (1997)
  • SUEZAWA Masashi ID: 9000003311261

    Institute for Materials Research, Tohoku University (2003 from CiNii)

    Articles in CiNii:13

    • High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon (2003)
    • Observation of Dipole-Forbidden Transitions through Fano Antiresonance in Boron-Doped Sillicon (1988)
    • Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon (1989)
  • SUEZAWA Masashi ID: 9000005563138

    Institute for Materials Research, Tohoku University (1994 from CiNii)

    Articles in CiNii:1

    • Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy (1994)
  • SUEZAWA Masashi ID: 9000005583370

    Institute for Materials Research, Tohoku University (1997 from CiNii)

    Articles in CiNii:1

    • Near Band-gap Photoluminescence Peak of Ge-doped GaAs (1997)
  • SUEZAWA Masashi ID: 9000005583403

    Institute for Materials Research, Tohoku University (1997 from CiNii)

    Articles in CiNii:1

    • Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon (1997)
  • SUEZAWA Masashi ID: 9000005599843

    Institute for Materials Research, Tohoku University (1999 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of the Optical Absorption Peaks at around 1990 cm^<-1> in Electron-irradiated Si doped with Hydrogen (1999)
  • SUEZAWA Masashi ID: 9000005653172

    Institute for Materials Research, Tohoku University (1994 from CiNii)

    Articles in CiNii:1

    • Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal (1994)
  • SUEZAWA Masashi ID: 9000005692062

    Institute for Materials Research, Tohoku University (1998 from CiNii)

    Articles in CiNii:1

    • Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It (1998)
  • SUEZAWA Masashi ID: 9000006485254

    Institute for Materials Research, Tohoku University (2007 from CiNii)

    Articles in CiNii:1

    • Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" (2007)
  • SUEZAWA Masashi ID: 9000006844543

    Institute for Materials Research, Tohoku University (2008 from CiNii)

    Articles in CiNii:1

    • Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'" (2008)
  • SUEZAWA Masashi ID: 9000046010671

    Institute for Materials Research, Tohoku University (2002 from CiNii)

    Articles in CiNii:1

    • Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study (2002)
  • SUEZAWA Masashi ID: 9000107344742

    Articles in CiNii:1

    • Formation Energy of Interstitial Si in Au-Doped Si Determined by Optical Absorption Measurements of H Bound to Interstitial Si (1998)
  • SUEZAWA Masashi ID: 9000107356186

    Articles in CiNii:1

    • Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy - Phosphorus Pairs in Si (1995)
  • SUEZAWA Masashi ID: 9000107383489

    Graduate School of Integrated Science, Yokohama City University (2005 from CiNii)

    Articles in CiNii:1

    • Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs (2005)
  • SUEZAWA Masashi ID: 9000107389970

    Institute for Materials Research, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen (2003)
  • SUEZAWA Masashi ID: 9000107396737

    Articles in CiNii:1

    • Positoron Annihilations Associated with Defects in Plastically Deformed Si (1995)
  • SUEZAWA Masashi ID: 9000253326524

    I. M. R., Tohoku Univ. (1996 from CiNii)

    Articles in CiNii:1

    • Hydrogen-related defects in Si (1996)
  • Suezawa Masashi ID: 9000014355630

    I.M.R., Tohoku Unviersity (1999 from CiNii)

    Articles in CiNii:11

    • Hydrogen-related defects in Si (1996)
    • Defects in Semiconductors (1997)
    • Optical absorption spectrum of Si grown in hydrogen atmosphere (1996)
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