Search Results1-20 of  24

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  • Suita Muneyoshi ID: 9000025121119

    Articles in CiNii:1

    • X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor (2007)
  • SUITA Muneyoshi ID: 9000002175347

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2009 from CiNii)

    Articles in CiNii:2

    • First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation (2007)
    • Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping (2009)
  • SUITA Muneyoshi ID: 9000004745008

    Mitsubishi Electric Corp. (2009 from CiNii)

    Articles in CiNii:16

    • Gas Source Molecular Beam Epitaxy of II-VI Compound Semiconductors with Use of Group VI Hydrides and Group II Metal (1996)
    • Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN (2003)
    • Zn Ion Implantation along the c Axis for Formation of Highly Resistive GaN Layers (2004)
  • SUITA Muneyoshi ID: 9000005578201

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (1999 from CiNii)

    Articles in CiNii:4

    • Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors (1997)
    • Electrical Characterization of Au/p-ZnSe Structure (1996)
    • Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr) TiO_3 Capacitors (1998)
  • SUITA Muneyoshi ID: 9000005716664

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (1997 from CiNii)

    Articles in CiNii:1

    • Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist (1997)
  • SUITA Muneyoshi ID: 9000107360830

    Advanced Technology Research and Development Center, Mitsubishi Electric Corporation (2008 from CiNii)

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2008)
  • SUITA Muneyoshi ID: 9000107389476

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate (2004)
  • Suita Muneyoshi ID: 9000252969972

    Department of Electrical Engineering, Faculty of Engineering, Osaka University (1989 from CiNii)

    Articles in CiNii:1

    • Dependence of Excitonic Emission Lines and the 1.47 eV Band on Growth Temperature and Substrate Misorientation in MOCVD-Grown CdTe Films on (100) GaAs (1989)
  • Suita Muneyoshi ID: 9000258134806

    Advanced Technology R&D Center, Mitsubishi Electric Corp., 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist. (1997)
  • Suita Muneyoshi ID: 9000258140876

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO3 Capacitors. (1998)
  • Suita Muneyoshi ID: 9000283157517

    Articles in CiNii:1

    • Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy. (1994)
  • Suita Muneyoshi ID: 9000392704566

    Articles in CiNii:1

    • Dependence of Excitonic Emission Lines and the 1.47 eV Band on Growth Temperature and Substrate Misorientation in MOCVD-Grown CdTe Films on (100) GaAs (1989)
  • Suita Muneyoshi ID: 9000401563832

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2007)
  • Suita Muneyoshi ID: 9000401565960

    Articles in CiNii:1

    • Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping (2009)
  • Suita Muneyoshi ID: 9000401614503

    Articles in CiNii:1

    • Dependence of Excitonic Emission Lines and the 1.47 eV Band on Growth Temperature and Substrate Misorientation in MOCVD-Grown CdTe Films on (100) GaAs (1989)
  • Suita Muneyoshi ID: 9000401645843

    Articles in CiNii:1

    • Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy (1994)
  • Suita Muneyoshi ID: 9000401659380

    Articles in CiNii:1

    • Electrical Characterization of Au/p-ZnSe Structure (1996)
  • Suita Muneyoshi ID: 9000401668069

    Articles in CiNii:1

    • Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist (1997)
  • Suita Muneyoshi ID: 9000401670794

    Articles in CiNii:1

    • Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO3Capacitors (1998)
  • Suita Muneyoshi ID: 9000401684569

    Articles in CiNii:1

    • Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000 (1999)
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