Search Results1-20 of  48

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  • Sunami Hideo ID: 9000024933343

    Articles in CiNii:1

    • Control of subthreshold characteristics of narrow-channel silicon-on-insulator n-type metal-oxide-semiconductor transistor with additional side gate electrodes (Special issue: Solid state devices and materials) (2007)
  • Sunami Hideo ID: 9000025031028

    Articles in CiNii:1

    • Proposal of vertical-channel metal oxide semiconductor field-effect transistor with entirely oxidized silicon beam isolation (Special issue: Solid state devices and materials) (2009)
  • Sunami Hideo ID: 9000025031493

    Articles in CiNii:1

    • An infrared silicon optical modulator of metal-oxide-semiconductor capacitor based on accumulation-carrier absorption (Special issue: Solid state devices and materials) (2009)
  • Hideo Sunami ID: 9000347398882

    Articles in CiNii:1

    • Capital Movements between the U.S. and Japan in the 1990s (1) (2002)
  • SUNAMI Hideo ID: 1000010311804

    Hiroshima University, Research Center for Nanodevices and Systems (2003 from CiNii)

    Articles in CiNii:1

    • A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications (2003)
  • SUNAMI Hideo ID: 9000001496632

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:2

    • Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation (2005)
    • An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors (2004)
  • SUNAMI Hideo ID: 9000002167625

    Hiroshima University, Research Center for Nanodevices and Systems (2004 from CiNii)

    Articles in CiNii:1

    • An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure (2004)
  • SUNAMI Hideo ID: 9000002169616

    Research Center for Nanodevices and Systems, Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors (2005)
  • SUNAMI Hideo ID: 9000002173099

    Research Center for Nanodevice and Systems, Hiroshima University (2006 from CiNii)

    Articles in CiNii:1

    • Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate Electrodes (2006)
  • SUNAMI Hideo ID: 9000002175749

    Hiroshima University, Research Center for Nanodevices and Systems (2007 from CiNii)

    Articles in CiNii:1

    • Proposal of a Silicon Optical Modulator Based on Inversion-Carrier Absorption (2007)
  • SUNAMI Hideo ID: 9000002177910

    Research Center for Nanodevice and Systems, Hiroshima University (2007 from CiNii)

    Articles in CiNii:1

    • An Optimized Silicidation Technique for Source and Drain of FINFET (2007)
  • SUNAMI Hideo ID: 9000004969022

    広島大学ナノデバイス・システム研究センター (2006 from CiNii)

    Articles in CiNii:6

    • Trends in Next-Generation LSI's and the Fabrication Line -Technology Forecast and 300-mm Wafer Fab- (1999)
    • Influence of Wafer Storage Environment on MOS Device Characteristics (2002)
    • Future Prospect of ULSI and Expectations to Polymer Materials (2003)
  • SUNAMI Hideo ID: 9000005537535

    Research Institute of Electrical Communication, Tohoku University (1968 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth with Light Irradiation (1968)
  • SUNAMI Hideo ID: 9000005752026

    Central Research laboratory, Hitachi Ltd. (1979 from CiNii)

    Articles in CiNii:1

    • Novel High Density, Stacked Capacitor MOS RAM : A-1: MOS DEVICE AND LIST (1) (1979)
  • SUNAMI Hideo ID: 9000005752129

    Central Research Laboratory, Hitachi Ltd. (1979 from CiNii)

    Articles in CiNii:1

    • Selective Oxide Coating of Silicon Gate (SELOCS) : A-4: DEVICE TECHNOLOGY (1) (1979)
  • SUNAMI Hideo ID: 9000107306360

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Field-Shield Trench Isolation with Self-Aligned Field Oxide (2003)
  • SUNAMI Hideo ID: 9000107388923

    Hiroshima University, Research Center for Nanodevices and Systems (2004 from CiNii)

    Articles in CiNii:1

    • A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation (2004)
  • SUNAMI Hideo ID: 9000107390067

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors (2003)
  • SUNAMI Hideo ID: 9000252844982

    Central Research Laboratory, Hitachi Ltd. (1986 from CiNii)

    Articles in CiNii:1

    • Fundamental and Technological Limits in Device Integration (1986)
  • SUNAMI Hideo ID: 9000253319573

    (株)日立製作所中央研究所 (1972 from CiNii)

    Articles in CiNii:1

    • Transfer Efficiency of Charge Coupled Devices (1972)
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