Search Results1-20 of  32

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  • Takahasi Masamitu ID: 9000024979729

    Articles in CiNii:1

    • Structural changes caused by quenching of InAs/GaAs(001) quantum dots (Special issue: Solid state devices and materials) (2011)
  • TAKAHASI Masamitu ID: 9000241193692

    Articles in CiNii:1

    • X-ray Diffraction Study of Crystal Growth Dynamics during Molecular-Beam Epitaxy of Ⅲ-Ⅴ Semiconductors (Frontier of Condensed Matter Physics using Synchrotron Radiation) (2013)
  • TAKAHASI Masamitu ID: 9000002177827

    Synchrotron Radiation Research Center, Japan Atomic Energy Agency (2007 from CiNii)

    Articles in CiNii:1

    • In-Situ X-Ray Diffraction during Semiconductor Nanostructure Growth (2007)
  • TAKAHASI Masamitu ID: 9000005544787

    Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute (2002 from CiNii)

    Articles in CiNii:1

    • X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III-V Semiconductors (2002)
  • TAKAHASI Masamitu ID: 9000005566977

    Institute for Solid State Physics, The University of Tokyo (1995 from CiNii)

    Articles in CiNii:1

    • Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method (1995)
  • TAKAHASI Masamitu ID: 9000016378791

    Synchrotron Radiation Research Center, Japan Atomic Energy Agency (2009 from CiNii)

    Articles in CiNii:1

    • In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms (2009)
  • TAKAHASI Masamitu ID: 9000020103486

    Synchrotron Radiation Research Center, Japan Atomic Energy Reserch Institute (2001 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2001)
  • TAKAHASI Masamitu ID: 9000107394346

    Japan Atomic Energy Agency (2012 from CiNii)

    Articles in CiNii:1

    • GaAs Surface under Molecular-Beam Epitaxial Growth Conditions (2012)
  • TAKAHASI Masamitu ID: 9000257984221

    Japan Atomic Energy Agency (2012 from CiNii)

    Articles in CiNii:1

    • GaAs Surface under Molecular-Beam Epitaxial Growth Conditions (2012)
  • Takahasi Masamitu ID: 9000024940462

    Articles in CiNii:1

    • Time-resolved X-ray diffraction measurements of high-density InAs Quantum Dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption (2010)
  • Takahasi Masamitu ID: 9000244017728

    Articles in CiNii:1

    • Acute and obtuse rhombohedrons in the local structures of relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O_3 (2014)
  • Takahasi Masamitu ID: 9000252984764

    Institute for Solid State Physics, The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • New Method for Studying Surface and Interface Structures Using Kossel Lines (1993)
  • Takahasi Masamitu ID: 9000258127303

    Institute for Solid State Physics, The University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method. (1995)
  • Takahasi Masamitu ID: 9000258702071

    Japan Atomic Energy Agency (2007 from CiNii)

    Articles in CiNii:1

    • In situ Structural Study of Ag UPD Layers Prepared on Au(111) during Ag/AgCl Reaction (2007)
  • Takahasi Masamitu ID: 9000283572845

    Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute, Japan (2006 from CiNii)

    Articles in CiNii:1

    • Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction (2006)
  • Takahasi Masamitu ID: 9000315679481

    Quantum Beam Science Center, Japan Atomic Energy Agency (2015 from CiNii)

    Articles in CiNii:1

    • Study of Semiconductor Growth Mechanism using in Situ Synchrotron X-ray Diffraction(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques) (2015)
  • Takahasi Masamitu ID: 9000315679483

    Quantum Beam Science Center, Japan Atomic Energy Agency (2015 from CiNii)

    Articles in CiNii:1

    • Strain Analysis of III-V Epitaxial Growth by in Situ Synchrotron X-ray Diffraction(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques) (2015)
  • Takahasi Masamitu ID: 9000318574422

    Articles in CiNii:1

    • Surface study of organopalladium molecules on S-terminated GaAs (2011)
  • Takahasi Masamitu ID: 9000392719961

    Articles in CiNii:1

    • New Method for Studying Surface and Interface Structures Using Kossel Lines (1993)
  • Takahasi Masamitu ID: 9000401566822

    Articles in CiNii:1

    • In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms (2009)
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