Search Results1-20 of  50

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  • TAKAMIYA Saburo ID: 9000001579667

    Graduate School of Natural Science and Technology, Kanazawa University (2005 from CiNii)

    Articles in CiNii:29

    • Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section (2005)
    • Effect of Oxidation by Ultraviolet & Ozone and Subsequent Nitridation by Electron Cyclotron Plasma on Gate Portion of GaAs-FETs (2005)
    • GaAs-MISFET with Oxi-nitrided Gate Film Formed by New Process Utilizing Al-layer as Resist Film For Selective Etching (2005)
  • TAKAMIYA Saburo ID: 9000004838170

    Graduate School of Natural Science and Technology, Kanazawa University (2005 from CiNii)

    Articles in CiNii:6

    • Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor (2005)
    • Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors (2003)
    • Phase-Decorrelated FMCW Reflectometry for Long Optical Fiber Characterization by Using a Laser Diode with Modulated External-Cavity (2000)
  • TAKAMIYA Saburo ID: 9000004843224

    Graduate School of Natural Science and Technology, Division of Electrical Engineering and Computer Science, Kanazawa University (2005 from CiNii)

    Articles in CiNii:1

    • Experimental Study of Lasing Characteristics of Brillouin/Erbium Optical Fiber Laser(Optoelectronics) (2005)
  • TAKAMIYA Saburo ID: 9000005735238

    Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation (1995 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismenthlycyclopentadienyl-Berylium (1995)
  • TAKAMIYA Saburo ID: 9000005752190

    Semiconductor Laboratory, Mitsubishi Electric Corporation (1980 from CiNii)

    Articles in CiNii:2

    • High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2) (1979)
    • A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY (1980)
  • TAKAMIYA Saburo ID: 9000014640046

    Articles in CiNii:2

    • (59)卒業研究達成度評価実施例(第16セッション 教育評価・自己点検・評価システム(I)) (2002)
    • Evaluation for achievement in the graduation work (2003)
  • TAKAMIYA Saburo ID: 9000014660343

    Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology, Kanazawa University (2006 from CiNii)

    Articles in CiNii:1

    • Extended-Range High-Resolution FMCW Reflectometry by Means of Electronically Frequency-Multiplied Sampling Signal Generated from Auxiliary Interferometer (2006)
  • TAKAMIYA Saburo ID: 9000107333746

    Graduate School of Natural Science and Technology, Kanazawa University (2006 from CiNii)

    Articles in CiNii:1

    • Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors (2006)
  • TAKAMIYA Saburo ID: 9000107343410

    Graduate School of Natural Science and Technology, Kanazawa University (2005 from CiNii)

    Articles in CiNii:1

    • Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface : Degradation of Insulator/Semiconductor Interface (2005)
  • TAKAMIYA Saburo ID: 9000107352747

    Graduate School of Natural Science and Technology, Kanazawa University (2005 from CiNii)

    Articles in CiNii:1

    • Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces (2005)
  • TAKAMIYA Saburo ID: 9000107366954

    Graduate School of Natural Science and Technology, Kanazawa University (2003 from CiNii)

    Articles in CiNii:1

    • Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method (2003)
  • TAKAMIYA Saburo ID: 9000107377874

    Graduate School of Natural Science and Technology, Kanazawa University (2003 from CiNii)

    Articles in CiNii:1

    • Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces (2003)
  • Takamiya Saburo ID: 9000004337429

    Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation (1995 from CiNii)

    Articles in CiNii:4

    • Gravity Effect on Vapor Phase Epitaxy of InP(<Special issue>Crystal Growth Experiments under Micro-gravity) (1994)
    • MBE growth of GaAs on misoriented substrates (1995)
    • Fluorine passivation of AlInAs/InGaAs/InP system : Material dependence (1995)
  • Takamiya Saburo ID: 9000023195327

    Articles in CiNii:1

    • Chromatic dispersion measurements of long optical fibers by means of optical ranging system using a frequency-shifted feedback laser (2001)
  • Takamiya Saburo ID: 9000023242443

    Articles in CiNii:1

    • Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process (2002)
  • Takamiya Saburo ID: 9000023300478

    Articles in CiNii:1

    • Chromatic dispersion measurements of long optical fibers by means of optical ranging system using a frequency-shifted feedback laser (2001)
  • Takamiya Saburo ID: 9000023324419

    Articles in CiNii:1

    • GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces (2004)
  • Takamiya Saburo ID: 9000023343358

    Articles in CiNii:1

    • Design of dispersion flattened photonic crystal fiber with a large core and a concentric missing ring (2005)
  • Takamiya Saburo ID: 9000024611813

    Articles in CiNii:1

    • Fablication of GaAs MISFET with nm-Thin Oxidized Layer Formed by UV and Ozone Process (2002)
  • Takamiya Saburo ID: 9000047245208

    Articles in CiNii:1

    • GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off (2006)
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