Search Results1-20 of  35

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  • TAKASU SHIN'ICHIRO ID: 9000254864892

    Mineralogical Institute, University of Tokyo|Matsuda Research Laboratory, Tokyo Shibaura Electric Company (1955 from CiNii)

    Articles in CiNii:1

    • ON INESITE FROM RENDAIJI (1955)
  • TAKASU Shin' Ichiro ID: 9000252865489

    Toshiba Semiconductor Group (1983 from CiNii)

    Articles in CiNii:1

    • Characterization of Electron Device Crystals (1983)
  • TAKASU Shin'Ichiro ID: 9000000013757

    SEMI Japan (1996 from CiNii)

    Articles in CiNii:1

    • How to choose the Si wafer diameter and what are the issues in large diameter Si crystal growth? (1996)
  • TAKASU Shin'Ichiro ID: 9000000524071

    SEMI (1994 from CiNii)

    Articles in CiNii:3

    • Issue of Crystal Growth (1994)
    • 人造ダイヤモンドの結晶的性質と半導体としての期待 (ダイヤモンド(特集)) (1966)
    • 高圧実験における安全対策 (1967)
  • TAKASU Shin'Ichiro ID: 9000252845667

    SEMI Japan (1996 from CiNii)

    Articles in CiNii:1

    • How to choose the Si wafer diameter and what are the issues in large diameter Si crystal growth? (1996)
  • TAKASU Shin'Ichiro ID: 9000253320163

    Articles in CiNii:1

    • 応用物理学会の役割 (1974)
  • TAKASU Shin'Ichiro ID: 9000253320650

    東芝総合研究所 (1976 from CiNii)

    Articles in CiNii:1

    • List of Characterization Methods of Solid Surface (1976)
  • TAKASU Shin'Ichiro ID: 9000253321756

    超LSI技術研究組合共同研究所 (1980 from CiNii)

    Articles in CiNii:1

    • Bow and Warpage of Si (1980)
  • TAKASU Shin'Ichiro ID: 9000253322529

    日本電子工業振興協会シリコン第9専門委員会 (1982 from CiNii)

    Articles in CiNii:1

    • A New Conversion Coefficient for Oxygen Content Determination in Si by IR-Absorption (1982)
  • TAKASU Shin'Ichiro ID: 9000253322534

    Toshiba Research and Development Center. (1982 from CiNii)

    Articles in CiNii:1

    • Wafer Design (1982)
  • TAKASU Shin'Ichiro ID: 9000253322687

    Toshiba Research Development Center. (1982 from CiNii)

    Articles in CiNii:1

    • Surface Cleaning Techniques of Semiconductor (1982)
  • TAKASU Shin'Ichiro ID: 9000253324942

    Toshiba Ceramics, Co., Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Si Crystal Growth under Magnetic Field (1990)
  • TAKASU Shin'Ichiro ID: 9000253325605

    Toshiba Ceramics Co. (1992 from CiNii)

    Articles in CiNii:1

    • Breakthrough in silicon crystal technology (1992)
  • TAKASU Shin'ichiro ID: 9000252843558

    Toshiba Central Research Laboratory (1963 from CiNii)

    Articles in CiNii:1

    • Progress in Man-made Minerals (1963)
  • TAKASU Shin'ichiro ID: 9000253245854

    Toshiba R and D Center (1972 from CiNii)

    Articles in CiNii:1

    • Polarizing-Microscopic Observations of “Opaque” Minerals with Transmuted Infrared Light (1972)
  • TAKASU Shin'ichiro ID: 9000253317945

    Central Research Laboratory, Tokyo Shibaura Electric Co. (1966 from CiNii)

    Articles in CiNii:1

    • Preparation and Electrical Properties of LaNi<sub><i>x</i></sub>Co<sub>1-<i>x</i></sub>O<sub>3</sub> Solid-Solution (1966)
  • TAKASU Shin'ichiro ID: 9000253320360

    東芝総合研究所 (1975 from CiNii)

    Articles in CiNii:1

    • Application of I. R. Observation on Semiconductor Device Production Process (1975)
  • TAKASU Shin'ichiro ID: 9000253321082

    Articles in CiNii:1

    • インターフェイス (1978)
  • TAKASU Shin-Ichiro ID: 9000020309918

    Toshiba Semiconductor Group, Toshiba Corporation (1983 from CiNii)

    Articles in CiNii:1

    • A Surface Treatment Apparatus for Large Diameter Semiconductor Wafers (1983)
  • TAKASU Shin-ichiro ID: 9000253317615

    東芝中研 (1965 from CiNii)

    Articles in CiNii:1

    • 超高圧カメラ (1965)
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