Search Results1-12 of  12

  • TAKASUGI Hidetoshi ID: 9000004900853

    NTT Access Network Systems Laboratories (1999 from CiNii)

    Articles in CiNii:11

    • 新たなアクセス系・ユ-ザ系網構成技術 (特集 配線系・ユ-ザ系光配線システム技術) (1998)
    • Optical Access Network Design for the Initial Stage of FTTH (1998)
    • A Study on Deployment of Optical Fiber Network in Underground Distribution Areas (1998)
  • TAKASUGI Hidetoshi ID: 9000018787943

    Innovative IP Architecture Center, NTT Communications Corporation (2011 from CiNii)

    Articles in CiNii:1

    • N+1 Efficient Standby System with "Virtual Machine Synchronization for Fault Tolerance" and "Instantaneous Live Migration" (2011)
  • TAKASUGI Hidetoshi ID: 9000244926415

    NTT NEOMEIT CORPORATION (2013 from CiNii)

    Articles in CiNii:1

    • NICT Science Cloud : An Extension of Security Functions in a Wide-Area Distribution File System (2013)
  • Takasugi Hidetoshi ID: 9000004336404

    Articles in CiNii:13

    • 効率的なπシステムの計画・設計業務の実現--πシステムシミュレーションAP(πデザイナー)完成版の導入 (1999)
    • 地下配線エリアにおける光化展開の検討 (1999)
    • 経済的で運用性の高い光アクセス網構成技術 (特集 多彩なサービスの経済的な提供を実現する光アクセスシステム技術) (2000)
  • Takasugi Hidetoshi ID: 9000252961419

    Institute of Materials Science, University of Tsukuba (1987 from CiNii)

    Articles in CiNii:1

    • Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy (1987)
  • Takasugi Hidetoshi ID: 9000252962571

    Institute of Materials Science, University of Tsukuba (1987 from CiNii)

    Articles in CiNii:1

    • Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy (1987)
  • Takasugi Hidetoshi ID: 9000392700071

    Articles in CiNii:1

    • Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy (1987)
  • Takasugi Hidetoshi ID: 9000392707119

    Articles in CiNii:1

    • Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy (1987)
  • Takasugi Hidetoshi ID: 9000392708716

    Articles in CiNii:1

    • Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE (1986)
  • Takasugi Hidetoshi ID: 9000401600233

    Articles in CiNii:1

    • Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE (1986)
  • Takasugi Hidetoshi ID: 9000401603169

    Articles in CiNii:1

    • Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy (1987)
  • Takasugi Hidetoshi ID: 9000401605418

    Articles in CiNii:1

    • Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy (1987)
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