Search Results1-19 of  19

  • TAKAYAMA Yoichiro ID: 1000090336826

    The University of Electro-Communications (2014 from CiNii)

    Articles in CiNii:124

    • Time Shared Driving and Detection System for Micro Vibratory Gyroscope with Single Vibration Coil (2004)
    • Nonlinearity Accuracy of Microwave FET Drain Current Models (2005)
    • Operation Analysis of Bulk-PZT Gyroscope (2005)
  • TAKAYAMA Yoichiro ID: 9000001632140

    Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo (2006 from CiNii)

    Articles in CiNii:3

    • Novel Micro Gyroscope with High-Q Rotational Vibration Structure (2005)
    • Large Deflection Electrostatic Spiral Actuator with Twisted-beams (2006)
    • Quantitative Analysis and Influence of CO_2 Absorbed in TMAH Solution for Silicon Etching (2003)
  • TAKAYAMA Yoichiro ID: 9000004815430

    Semiconductor Group, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers (1997)
  • TAKAYAMA Yoichiro ID: 9000004815448

    Semiconductor Group, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Large-Signal Analysis of Power MOSFETs and Its Application to Device Design (1997)
  • TAKAYAMA Yoichiro ID: 9000004815484

    Semiconductor Group, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (1997)
  • TAKAYAMA Yoichiro ID: 9000004841092

    University of Hyogo (2004 from CiNii)

    Articles in CiNii:1

    • Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits (2004)
  • TAKAYAMA Yoichiro ID: 9000005731277

    Microelectronics Research Laboratories (1983 from CiNii)

    Articles in CiNii:2

    • High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes : B-5: GaAs IC (1983)
    • Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC (1980)
  • TAKAYAMA Yoichiro ID: 9000005731302

    Microelectronics Research Laboratories (1983 from CiNii)

    Articles in CiNii:1

    • MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC (1983)
  • TAKAYAMA Yoichiro ID: 9000018821270

    University of Electro-Communications (2011 from CiNii)

    Articles in CiNii:1

    • A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier (2011)
  • TAKAYAMA Yoichiro ID: 9000242084991

    The University of Electro-Communications (2014 from CiNii)

    Articles in CiNii:1

    • A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs (2014)
  • TAKAYAMA Yoichiro ID: 9000262060948

    The University of Electro-Communications (2014 from CiNii)

    Articles in CiNii:1

    • C-2-24 Power Gain Characteristic of Independently Biased HBT Cascode Chip (2014)
  • TAKAYAMA Yoichiro ID: 9000347641986

    The University of Electro-Communications (2016 from CiNii)

    Articles in CiNii:1

    • Miniature Design Technique of Stabilized C-Band p-HEMT MMIC Doherty Power Amplifier with Lumped Element Load Modulator (2016)
  • TAKAYAMA Yoichiro ID: 9000347642174

    Department of Communication Engineering and Informatics, The University of Electro-Communications (2016 from CiNii)

    Articles in CiNii:1

    • Experimental Design Method for High-Efficiency Microwave Power Amplifiers Based on a Low-Frequency Active Harmonic Load-Pull Technique (2016)
  • Takayama Yoichiro ID: 9000021699975

    Articles in CiNii:1

    • Microwave GaAs ICs. (1985)
  • Takayama Yoichiro ID: 9000321408216

    The University of Electro-Communications (2016 from CiNii)

    Articles in CiNii:1

    • C-2-12 A Duplexing Circuit for Concurrent Dual-Band Amplifier Consisting of Two Amplifier Units (2016)
  • Takayama Yoichiro ID: 9000402028723

    Articles in CiNii:1

    • Power gain performance enhancement of independently biased heterojunction bipolar transistor cascode chip (2015)
  • Takayama Yoichiro ID: 9000402054536

    Articles in CiNii:1

    • Power GaAs MESFETs with a Graded Recess Structure (1980)
  • Takayama Yoichiro ID: 9000402056909

    Articles in CiNii:1

    • High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes (1983)
  • Takayama Yoichiro ID: 9000402056934

    Articles in CiNii:1

    • MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs (1983)
Page Top