Search Results1-7 of  7

  • TAKEMI Masayoshi ID: 9000002169026

    High Frequency & Optical Device Works., Mitsubishi Electric Corporation (2005 from CiNii)

    Articles in CiNii:1

    • High Power operation of GaN-based laser diode with high slope efficiency (2005)
  • Takemi Masayoshi ID: 9000025082802

    Articles in CiNii:1

    • Metalorganic vapor phase epitaxial growth parameter dependence of phase separation in miscibility gap of InGaAsP (2008)
  • Takemi Masayoshi ID: 9000025094734

    Articles in CiNii:1

    • Investigation of anomalous optical characteristics of InGaAsP layers on GaAs substrates grown by metalorganic vapor phase epitaxy (2008)
  • Takemi Masayoshi ID: 9000252763284

    Department of Electrical Engineering, Kyoto University (1990 from CiNii)

    Articles in CiNii:1

    • OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source (1990)
  • Takemi Masayoshi ID: 9000321408880

    High Frequency and Optical Device Works, Mitsubishi Electric Corporation (2016 from CiNii)

    Articles in CiNii:1

    • C-4-2 Resonant Cavity 25Gbps APD for high responsivity and low dark current (2016)
  • Takemi Masayoshi ID: 9000392715720

    Articles in CiNii:1

    • OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source (1990)
  • Takemi Masayoshi ID: 9000401618333

    Articles in CiNii:1

    • OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source (1990)
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