Search Results1-20 of  21

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  • TANAHASHI Katsuto ID: 9000001814714

    Fujitsu Limited (2006 from CiNii)

    Articles in CiNii:1

    • Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement (2006)
  • TANAHASHI Katsuto ID: 9000015605585

    Nano-Electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited (2003 from CiNii)

    Articles in CiNii:1

    • Technique for Determination of Nitrogen Concentration in Czochralski Silicon by Infrared Absorption Measurement (2003)
  • TANAHASHI Katsuto ID: 9000020321962

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (2000 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2000)
  • TANAHASHI Katsuto ID: 9000107347520

    Nano-electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited (2004 from CiNii)

    Articles in CiNii:1

    • Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method (2004)
  • TANAHASHI Katsuto ID: 9000253649161

    College of Integrated Arts and Science, Osaka Prefecture University (1997 from CiNii)

    Articles in CiNii:1

    • Kinetics on MBE-grown GaAs Surface during Annealing as Revealed by in-situ SEM Observation. (1997)
  • TANAHASHI Katsuto ID: 9000253649304

    College of Integrated Art and Science, Osaka Prefecture University (1998 from CiNii)

    Articles in CiNii:1

    • Observation of Heavily Phosphorus-Doped Silicon Surfaces by Atomic Force Microscope. (1998)
  • TANAHASHI Katsuto ID: 9000253649314

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (1998 from CiNii)

    Articles in CiNii:1

    • Three Dimensional Growth in GaAs MBE Studied by in-situ Scanning Electron Microscopy. (1998)
  • TANAHASHI Katsuto ID: 9000253649840

    RIAST, Osaka Prefecture University (1999 from CiNii)

    Articles in CiNii:1

    • Asymmetric Behavior of Monolayer Hole and Preferential Nucleation of Three Dimensional Islands in GaAs Molecular Beam Epitaxy Revealed by In-situ Scanning Electron Microscopy. (1999)
  • TANAHASHI Katsuto ID: 9000257982148

    RIAST, Osaka Prefecture University (2000 from CiNii)

    Articles in CiNii:1

    • Work Function of GaAs(001) Surface Obtained by in-situ Scanning Electron Microscopy. (2000)
  • Tanahashi Katsuto ID: 9000025071272

    Articles in CiNii:1

    • Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation (2007)
  • Tanahashi Katsuto ID: 9000253249815

    Department of Materials Science and Engineering, Nagoya Institute of Technology (1995 from CiNii)

    Articles in CiNii:1

    • Internal Friction Study of Microplasticity of Aluminum Thin Films on Silicon Substrates (1995)
  • Tanahashi Katsuto ID: 9000258171960

    Nano-electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited (2004 from CiNii)

    Articles in CiNii:1

    • Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method (2004)
  • Tanahashi Katsuto ID: 9000283187734

    Nano-Electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited (2003 from CiNii)

    Articles in CiNii:1

    • Technique for Determination of Nitrogen Concentration in Czochralski Silicon by Infrared Absorption Measurement. (2003)
  • Tanahashi Katsuto ID: 9000401722454

    Articles in CiNii:1

    • Technique for Determination of Nitrogen Concentration in Czochralski Silicon by Infrared Absorption Measurement (2003)
  • Tanahashi Katsuto ID: 9000401733382

    Articles in CiNii:1

    • Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method (2004)
  • Tanahashi Katsuto ID: 9000401755218

    Articles in CiNii:1

    • Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement (2006)
  • Tanahashi Katsuto ID: 9000401983670

    Articles in CiNii:1

    • Internal quantum efficiency mapping for evaluation of rear surface of passivated emitter and rear cell (2018)
  • Tanahashi Katsuto ID: 9000402047352

    Articles in CiNii:1

    • Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method (2018)
  • Tanahashi Katsuto ID: 9000402050720

    Articles in CiNii:1

    • The impact of subsurface damage on the fracture strength of diamond-wire-sawn monocrystalline silicon wafers (2018)
  • Tanahashi Katsuto ID: 9000402051501

    Articles in CiNii:1

    • 2018-07-30 (2018)
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