Search Results1-20 of  50

  • 1 / 3
  • TANIMURA Junji ID: 9000004817191

    The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:4

    • Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors (1997)
    • Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition (1998)
    • Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr) TiO_3 Capacitors (1998)
  • TANIMURA Junji ID: 9000004963406

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2008 from CiNii)

    Articles in CiNii:6

    • Vapor Phase Epitaxy of InGaP under microgravity in Space Flyer Unit (1996)
    • Vapor Phase Epitaxy of InGaP under Microgravity in Space Flyer Unit (1997)
    • Characterization of Single Grain Boundaries in a Bi-Doped ZnO Varistor Using a Focused Ton Beam System (2000)
  • TANIMURA Junji ID: 9000005547130

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:2

    • Hysteretic Josephson Junction Behavior of Ba_<1-x>K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates (1994)
    • DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77K (1996)
  • TANIMURA Junji ID: 9000005890371

    Advanced Technology R&D Center, Mitsubishi Electric Corp (2000 from CiNii)

    Articles in CiNii:1

    • Characterization of Single Grain Boumdaries in a Bi-Doped ZnO Varistor Using a Focused Ion Beam System (2000)
  • TANIMURA Junji ID: 9000006728300

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition (2001)
  • TANIMURA Junji ID: 9000017174787

    Mitsubishi Electric Corporation (2009 from CiNii)

    Articles in CiNii:1

    • Activity report of CIGRE A2.32 working group on copper sulfide (2009)
  • TANIMURA Junji ID: 9000017483272

    三菱電機(株)先端技術総合研究所 環境・分析評価技術部 (2010 from CiNii)

    Articles in CiNii:1

    • Plastic Closed-loop Recycling Technology of Waste Household Appliances (2010)
  • TANIMURA Junji ID: 9000107324495

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Highly Selective Removal of Residual Deposited Films and Oxide Hard Masks on Polysilicon Gate Electrodes in Anhydrous HF Gases (2004)
  • Tanimura Junji ID: 9000252763568

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection (1991)
  • Tanimura Junji ID: 9000252767481

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO<SUB>3</SUB>(110) Substrate Using a MgO Buffer Layer (1993)
  • Tanimura Junji ID: 9000252978280

    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO<SUB>3</SUB> (110) Surfaces (1991)
  • Tanimura Junji ID: 9000252978981

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Bi<SUB>2</SUB>(Sr, Ca)<SUB>3</SUB>Cu<SUB>2</SUB>O<I><SUB>x</SUB></I> and Bi<SUB>2</SUB>(Sr, Ca)<SUB>4</SUB>Cu<SUB>3</SUB>O<I><SUB>x</SUB></I> Thin Films with (11<I>n</I>) Orientation (1991)
  • Tanimura Junji ID: 9000252979123

    Materiais and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • BiSrCaCuO Thin Film Grown on SrTiO<SUB>3</SUB> Substrate with Off-Oriented (110) Surface (1991)
  • Tanimura Junji ID: 9000252979211

    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Microscopic Study on (11<I>n</I>)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy (1991)
  • Tanimura Junji ID: 9000252983369

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1992 from CiNii)

    Articles in CiNii:1

    • Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11<I>n</I>) and (001) Orientation (1992)
  • Tanimura Junji ID: 9000252987901

    Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Dielectric Properties of (Ba, Sr)TiO<SUB>3</SUB> Thin Films Deposited by RF Sputtering (1993)
  • Tanimura Junji ID: 9000252988672

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • (01<I>n</I>)-Oriented BiSrCaCuO Thin Films Formed on CeO<SUB>2</SUB> Buffer Layers (1993)
  • Tanimura Junji ID: 9000252989028

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films (1993)
  • Tanimura Junji ID: 9000258123386

    Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661 (1994 from CiNii)

    Articles in CiNii:1

    • Hysteretic Josephson Junction Behavior of Ba1-xKxBiO3 Grain Boundary Junctions Using SrTiO3 Bicrystal Substrates. (1994)
  • Tanimura Junji ID: 9000258132427

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661, Japan (1996 from CiNii)

    Articles in CiNii:1

    • DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77K. (1996)
  • 1 / 3
Page Top