Search Results1-20 of  56

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  • TANOUE Hisao ID: 9000001921451

    National Institute of Advanced Industry Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Development of Bipolar-pulse Accelerator for Intense Pulsed Ion Beam Acceleration (2003)
  • TANOUE Hisao ID: 9000003272707

    Electrotechnical Laboratory (1971 from CiNii)

    Articles in CiNii:1

    • Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors (1971)
  • TANOUE Hisao ID: 9000107306271

    Nanoelectronics Research Institute, AIST (2003 from CiNii)

    Articles in CiNii:1

    • Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging (2003)
  • TANOUE Hisao ID: 9000107306339

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE) (2003)
  • TANOUE Hisao ID: 9000107332810

    National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas (2004)
  • TANOUE Hisao ID: 9000107343918

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy (2005)
  • TANOUE Hisao ID: 9000107377968

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication (2003)
  • TANOUE Hisao ID: 9000107383511

    National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method (2005)
  • TANOUE Hisao ID: 9000107388929

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs (2004)
  • TANOUE Hisao ID: 9000253677303

    電子技術総合研究所 (1986 from CiNii)

    Articles in CiNii:1

    • Contamination control in electron device fabrication. (1986)
  • TANOUE Hisao ID: 9000254834134

    Electrotechnical Laboratory (1988 from CiNii)

    Articles in CiNii:1

    • Irradiation-induced phase transformation in stainless steel. II. Implantation effect by metal ions.:II Implantation Effect by Metal Ions (1988)
  • Tanoue Hisao ID: 9000252755654

    Electrotechnical Laboratory (1974 from CiNii)

    Articles in CiNii:1

    • Hot Implantation of Nitrogen Ions into GaAs<SUB>1−<I>x</I></SUB>P<I><SUB>x</SUB></I> (<I>x</I>=0.36) (1974)
  • Tanoue Hisao ID: 9000252941056

    Electrotechnical Laboratory (1974 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of Indirect-Band-Gap GaAs<SUB>1−<I>x</I></SUB>P<I><SUB>x</SUB></I> (<I>x</I>=0.52) Implanted with Nitrogen Ions (1974)
  • Tanoue Hisao ID: 9000252952109

    Electrotechnical Laboratory (1982 from CiNii)

    Articles in CiNii:1

    • High Temperature Stable W-GaAs Schottky Barrier (1982)
  • Tanoue Hisao ID: 9000252954427

    Electrotechnical Laboratory (1984 from CiNii)

    Articles in CiNii:1

    • Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion Bombardment (1984)
  • Tanoue Hisao ID: 9000252956304

    Electrotechnical Laboratory (1985 from CiNii)

    Articles in CiNii:1

    • Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films; Ion-Beam-Induced Modification of Thin Ni Layers on Si(100) (1985)
  • Tanoue Hisao ID: 9000252961461

    Electrotechnical Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams (1987)
  • Tanoue Hisao ID: 9000252983453

    Electrotechnical Laboratory (1992 from CiNii)

    Articles in CiNii:1

    • Dependence of Hooge Parameter of Compound Semiconductors on Temperature (1992)
  • Tanoue Hisao ID: 9000253279559

    Electrotechnical Laboratory, Ministry of International Trade and Industry (1976 from CiNii)

    Articles in CiNii:1

    • Ion Bombardment Enhanced Selective Etching of Garnets (1976)
  • Tanoue Hisao ID: 9000254548044

    Electrotechnical Laboratory (1971 from CiNii)

    Articles in CiNii:1

    • Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors (1971)
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