Search Results1-20 of  26

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  • Tatebayashi Jun ID: 9000024934866

    Articles in CiNii:1

    • Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition (Special Issue : Applied Physics on Materials Research) (2012)
  • TATEBAYASHI Jun ID: 9000399575515

    Articles in CiNii:1

    • Circularly Polarized Light Emission by Semiconductor-Based Three-Dimensional Chiral Photonic Crystals (光エレクトロニクス) (2018)
  • TATEBAYASHI Jun ID: 9000399577673

    Articles in CiNii:1

    • Circularly Polarized Light Emission by Semiconductor-Based Three-Dimensional Chiral Photonic Crystals (レーザ・量子エレクトロニクス) (2018)
  • TATEBAYASHI Jun ID: 9000004964714

    Articles in CiNii:9

    • 半導体三次元カイラルフォトニック結晶による円偏光発光制御 (電磁界理論研究会・フォトニック NW・デバイス、フォトニック結晶、ファイバーとその応用、光集積回路、光導波路素子、光スイッチング、導波路解析、マイクロ波・ミリ波フォトニクス、及び一般) (2018)
    • 半導体三次元カイラルフォトニック結晶による円偏光発光制御 (フォトニックネットワーク) (2018)
    • 半導体三次元カイラルフォトニック結晶による円偏光発光制御 (電磁界理論) (2018)
  • TATEBAYASHI Jun ID: 9000005904304

    Institute of Industrial Science, The University of Tokyo (2005 from CiNii)

    Articles in CiNii:4

    • Enhanced Optical Properties of High-Density (>10^<11>/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation (2004)
    • Observation of Light Emission at-1.5μm from InAs Quantum Dots in Photonic Crystal Microcavity (2004)
    • Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands (2005)
  • TATEBAYASHI Jun ID: 9000015735022

    Research Center for Advanced Science and Technology, University of Tokyo (2003 from CiNii)

    Articles in CiNii:1

    • Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3μm Light Emission (2003)
  • TATEBAYASHI Jun ID: 9000018185494

    California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles (2009 from CiNii)

    Articles in CiNii:1

    • Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates (2009)
  • TATEBAYASHI Jun ID: 9000107344297

    Institute of Industrial Science, University of Tokyo (2005 from CiNii)

    Articles in CiNii:1

    • Observation of 1.55μm Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity (2005)
  • TATEBAYASHI Jun ID: 9000107349654

    Research Center for Advanced Science and Technology, Institute of Industrial Science, University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots (2004)
  • TATEBAYASHI Jun ID: 9000107388635

    Research Center for Advanced Science and Technology, University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Control of In_xGa_<1-x>As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots (2004)
  • TATEBAYASHI Jun ID: 9000404504042

    Institute of Industrial Science, The University of Tokyo (2016 from CiNii)

    Articles in CiNii:1

    • Advances in nanowire-based quantum dot lasers (2016)
  • Tatebayashi Jun ID: 9000025097077

    Articles in CiNii:1

    • Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands (Special Issue: Solid State Devices & Materials) (2006)
  • Tatebayashi Jun ID: 9000258151825

    Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD. (2000)
  • Tatebayashi Jun ID: 9000258166820

    Research Center for Advanced Science and Technology, University of Tokyo (2003 from CiNii)

    Articles in CiNii:1

    • Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3.MU.m Light Emission (2003)
  • Tatebayashi Jun ID: 9000258173753

    Research Center for Advanced Science and Technology, Institute of Industrial Science, University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots (2004)
  • Tatebayashi Jun ID: 9000258180762

    Institute of Industrial Science, University of Tokyo|Nanoelectronics Collaborative Research Center, University of Tokyo (2005 from CiNii)

    Articles in CiNii:1

    • Observation of 1.55.MU.m Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity (2005)
  • Tatebayashi Jun ID: 9000401567178

    Articles in CiNii:1

    • 2009-11-06 (2009)
  • Tatebayashi Jun ID: 9000401688581

    Articles in CiNii:1

    • Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD (2000)
  • Tatebayashi Jun ID: 9000401715473

    Articles in CiNii:1

    • 2003-04-30 (2003)
  • Tatebayashi Jun ID: 9000401726947

    Articles in CiNii:1

    • Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots (2004)
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