Search Results1-20 of  24

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  • TERASHIMA Koichi ID: 9000001496555

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:2

    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2005)
    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2004)
  • TERASHIMA Koichi ID: 9000003315293

    Microelectronics Research Laboratories,NEC Corporation (1991 from CiNii)

    Articles in CiNii:2

    • Piezooptical Studies of Group 4B Transition Metal Disulfides ZrS2 and HfS2 (1991)
    • Indirect Transitions in the Fundamental Absorption Edges of ZrS2 and HfS2 (1990)
  • TERASHIMA Koichi ID: 9000005793683

    NECシリコンシステム研究所 (2003 from CiNii)

    Articles in CiNii:2

    • 2.2 Influence of hydrogen near the SiO_2/Si interface on long-term reliability of LSI (Proceedings of 16^<th> Reliability Symposium) (2003)
    • Influence of hydrogen near the SiO_2/Si interface on long-term reliability of LSI (2003)
  • TERASHIMA Koichi ID: 9000005903909

    ULSI Device Development Laboratory, NEC Corporation (2000 from CiNii)

    Articles in CiNii:2

    • Photoluminescence of Low-Energy B± Implanted Silicon under Ultraviolet Light Excitation (1999)
    • Photoluminescence of Low-Energy B^+-Implanted Silicon under Ultraviolet Light Excitation (2000)
  • TERASHIMA Koichi ID: 9000006345022

    NEC (2007 from CiNii)

    Articles in CiNii:2

    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
  • TERASHIMA Koichi ID: 9000046151862

    Silicon Systems Research Laboratories. NEC Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Luminescence Centers in Indium-Implanted Silicon (2002)
  • TERASHIMA Koichi ID: 9000107379270

    Articles in CiNii:1

    • Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon (2002)
  • TERASHIMA Koichi ID: 9000375890977

    Tokyo Institute of Technology (2017 from CiNii)

    Articles in CiNii:1

    • A self-propelling catheter capable of generating traveling waves by a mono-line drive:-Aiming for adaptation to bronchoscopy- (2017)
  • TERASHIMA Koichi ID: 9000392524682

    Tokyo Institute of Technology (2016 from CiNii)

    Articles in CiNii:1

    • Proposal of a Flexible linear actuator generating traveling wave by a mono-line drive (2016)
  • Terashima Koichi ID: 9000252763758

    Microelectronics Research Laboratories, NEC Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Quantum Well Structures (1991)
  • Terashima Koichi ID: 9000252966043

    Articles in CiNii:1

    • YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>y</SUB></I> Superconducting Thin Film Obtained by Laser Annealing (1988)
  • Terashima Koichi ID: 9000254139179

    Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Piezooptical Studies of Group 4B Transition Metal Disulfides ZrS<SUB>2</SUB> and HfS<SUB>2</SUB> (1991)
  • Terashima Koichi ID: 9000254567008

    Department of Pure and Applied Sciences, College of Arts and Sciences, University of Tokyo (1990 from CiNii)

    Articles in CiNii:1

    • Indirect Transitions in the Fundamental Absorption Edges of ZrS<SUB>2</SUB> and HfS<SUB>2</SUB> (1990)
  • Terashima Koichi ID: 9000258151881

    ULSI Device Development Laboratory, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of Low-Energy B+-Implanted Silicon under Ultraviolet Light Excitation. (2000)
  • Terashima Koichi ID: 9000258159901

    Silicon Systems Research Laboratories, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon. (2002)
  • Terashima Koichi ID: 9000392725432

    Articles in CiNii:1

    • Photoluminescence of Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Quantum Well Structures (1991)
  • Terashima Koichi ID: 9000401609906

    Articles in CiNii:1

    • YBa2Cu3OySuperconducting Thin Film Obtained by Laser Annealing (1988)
  • Terashima Koichi ID: 9000401623872

    Articles in CiNii:1

    • Photoluminescence of Si1-xGex/Si Quantum Well Structures (1991)
  • Terashima Koichi ID: 9000401688428

    Articles in CiNii:1

    • Photoluminescence of Low-Energy B+-Implanted Silicon under Ultraviolet Light Excitation (2000)
  • Terashima Koichi ID: 9000401704779

    Articles in CiNii:1

    • Luminescence Centers in Indium-Implanted Silicon (2002)
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