Search Results1-20 of  29

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  • Terauchi Mamoru ID: 9000024966001

    Articles in CiNii:1

    • Test circuit for evaluating characteristics mismatch in metal-oxide-semiconductor field-effect transistor pairs by estimating conductance variation through voltage measurement (2008)
  • Terauchi Mamoru ID: 9000025067943

    Articles in CiNii:1

    • Temperature dependence of the subthreshold characteristics of dynamic threshold metal-oxide-semiconductor field-effect transistors and its application to an absolute-temperature sensing scheme for low-voltage operation (2007)
  • Terauchi Mamoru ID: 9000025068139

    Articles in CiNii:1

    • A wide-dynamic-range photodiode-type active pixel sensor cell with seamlessly combined logarithmic-linear-logarithmic response (2007)
  • Terauchi Mamoru ID: 9000025068243

    Articles in CiNii:1

    • Impact ff forward substrate bias on threshold voltage fluctuation in metal-oxide-semiconductor field-effect transistors (2007)
  • Mamoru Terauchi ID: 9000317170900

    Articles in CiNii:1

    • 情報リテラシーを含む技術リテラシー教育について (2015)
  • Mamoru Terauchi ID: 9000317170903

    Articles in CiNii:1

    • 教養としての科学-Newton力学/古典電磁気学/量子力学と「技術」との関連について- (2015)
  • Mamoru Terauchi ID: 9000317170906

    Articles in CiNii:1

    • "水素エネルギー社会"を考える際に知っておくべきこと (2015)
  • TERAUCHI Mamoru ID: 9000001496738

    Department of Computer Engineering, Faculty of Information Sciences, Hiroshima City University (2005 from CiNii)

    Articles in CiNii:2

    • Selectable Logarithmic/Linear Response Active Pixel Sensor Cell with Reduced Fixed-Pattern-Noise Based on Dynamic Threshold MOS Operation (2005)
    • A Selectable Logarithmic / Linear Response Active Pixel Sensor Cell with Reduced Fixed-Pattern-Noise Based on DTMOS Operation (2004)
  • TERAUCHI Mamoru ID: 9000002170540

    Dept. of Computer Engineering, Fac. of Information Sciences, Hiroshima City University (2005 from CiNii)

    Articles in CiNii:1

    • A Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor Cells (2005)
  • TERAUCHI Mamoru ID: 9000004815056

    Department of Computer Engineering, Faculty of Information Sciences, Hiroshima City University (2004 from CiNii)

    Articles in CiNii:6

    • Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation (1996)
    • SOI SRAM/DRAM Cells for 0.5V Operation (2004)
    • Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application (1997)
  • TERAUCHI Mamoru ID: 9000015734635

    Department of Computer Engineering, Faculty of Information Science, Hiroshima City University (2003 from CiNii)

    Articles in CiNii:1

    • A 'Self-Body-Biased' SOI MOSFET: A Novel Body-Voltage-Controlled SOI MOSFET for Low Voltage Applications (2003)
  • TERAUCHI Mamoru ID: 9000107383048

    ULSI Research Laboratories, R&D Center, Toshiba Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs (1996)
  • Terauchi Mamoru ID: 9000024988838

    Articles in CiNii:1

    • Impact of substrate bias on fixed-pattern-noise in active pixel sensor cells (2007)
  • Terauchi Mamoru ID: 9000025071152

    Articles in CiNii:1

    • Feasibility stud of a novel four transistor silicon-on-insulator static random access memory cell utilizing partial trench isolation (2007)
  • Terauchi Mamoru ID: 9000025097176

    Articles in CiNii:1

    • Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor Cells (Special Issue: Solid State Devices & Materials) (2006)
  • Terauchi Mamoru ID: 9000258131804

    ULSI Research Laboratories, R&D Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs. (1996)
  • Terauchi Mamoru ID: 9000258131982

    ULSI Research Laboratories, R & D Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki, 210 Japan (1996 from CiNii)

    Articles in CiNii:1

    • Analysis of Si-Ge Source Structure in 0.15 .MU.m SOI MOSFETs Using Two-Dimensional Device Simulation. (1996)
  • Terauchi Mamoru ID: 9000258140982

    Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba–cho Saiwai–ku, Kawasaki 210, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Evaluation of 0.3.MU.m Poly-Silicon CMOS Circuits for Intelligent Power IC Application. (1998)
  • Terauchi Mamoru ID: 9000258167006

    Department of Computer Engineering, Faculty of Information Sciences, Hiroshima City University (2003 from CiNii)

    Articles in CiNii:1

    • A 'Self-Body-Biased' SOI MOSFET: A Novel Body-Voltage-Controlled SOI MOSFET for Low Voltage Applications (2003)
  • Terauchi Mamoru ID: 9000258180813

    Department of Computer Engineering, Faculty of Information Sciences, Hiroshima City University (2005 from CiNii)

    Articles in CiNii:1

    • Selectable Logarithmic/Linear Response Active Pixel Sensor Cell with Reduced Fixed-Pattern-Noise Based on Dynamic Threshold MOS Operation (2005)
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