Search Results1-20 of  48

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  • Tokuda Norio ID: 9000019103659

    Articles in CiNii:1

    • Isotope Effect of Deuterium Microwave Plasmas on the Formation of Atomically Flat (111) Diamond Surfaces (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) (2012)
  • Tokuda Norio ID: 9000025122100

    Articles in CiNii:1

    • Annealing effects on cathodoluminescence properties of SiOx films deposited by radio frequency sputtering (Special issue: Nano electronic materials) (2011)
  • Tokuda Norio ID: 9000241878274

    Articles in CiNii:1

    • Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces) (2013)
  • TOKUDA NORIO ID: 9000004348363

    Processing Programs Section, Yokosuka Electrical Communication Laboratory, N.T.T. (1981 from CiNii)

    Articles in CiNii:1

    • Design and Evaluation of the Extensible Programming Language System PROTO - E (1981)
  • TOKUDA Norio ID: 9000005562007

    Institute of Science and Engineering, Kanazawa University (2010 from CiNii)

    Articles in CiNii:9

    • Selective Growth of Cu Nanowires on Si(111) Substrates (2003)
    • Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy (2004)
    • Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water (2005)
  • TOKUDA Norio ID: 9000015563721

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Leakage Current Distribution of Cu-Contaminated Thin SiO_2 (2003)
  • TOKUDA Norio ID: 9000045891940

    Institute of Applied Physics, University of Tsukuba (2001 from CiNii)

    Articles in CiNii:1

    • SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation (2001)
  • TOKUDA Norio ID: 9000107306572

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces (2003)
  • TOKUDA Norio ID: 9000107313960

    Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2007 from CiNii)

    Articles in CiNii:1

    • Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates (2007)
  • TOKUDA Norio ID: 9000107356362

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface (2003)
  • TOKUDA Norio ID: 9000258092859

    金沢大学理工研究域電子情報学系 (2014 from CiNii)

    Articles in CiNii:1

    • Realization of Atomically Controlled Diamond Surfaces (2014)
  • Tokuda Norio ID: 9000025066365

    Articles in CiNii:1

    • Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) (2012)
  • Tokuda Norio ID: 9000258163704

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Selective Growth of Cu Nanowires on Si(111) Substrates (2003)
  • Tokuda Norio ID: 9000258165027

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Leakage Current Distribution of Cu-Contaminated Thin SiO2. (2003)
  • Tokuda Norio ID: 9000258166648

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces (2003)
  • Tokuda Norio ID: 9000258170711

    Institute of Applied Physics, University of Tsukuba (2004 from CiNii)

    Articles in CiNii:1

    • Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by Conductive Atomic Force Microscopy (2004)
  • Tokuda Norio ID: 9000258177414

    Institute of Applied Physics, University of Tsukuba (2005 from CiNii)

    Articles in CiNii:1

    • Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water (2005)
  • Tokuda Norio ID: 9000258654008

    Kanazawa Univ., AIST, CREST/JST (2011 from CiNii)

    Articles in CiNii:1

    • ダイヤモンド表面の原子レベル制御(キーノートスピーチ) (2011)
  • Tokuda Norio ID: 9000258700918

    AIST|JST/CREST (2006 from CiNii)

    Articles in CiNii:1

    • Formation of step-free surfaces on diamond(111) mesas (2006)
  • Tokuda Norio ID: 9000334430120

    Articles in CiNii:1

    • Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics (2016)
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