Search Results1-7 of  7

  • TOMISHIMA Shigeki ID: 9000003280568

    ULSI Laboratory, Mitsubishi Electric Corporation (1997 from CiNii)

    Articles in CiNii:4

    • SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories (1996)
    • Electronic Band Structures for Non-Magnetic and Ferromagnetic States of Transition-Metal Intercalation Compound Mn1/4TaS2 (1990)
    • A Blanket Source Line Architecture with Triple Metal for Giga Scale Memory LSIs (1996)
  • TOMISHIMA Shigeki ID: 9000004745149

    ULSI Development Center,Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:4

    • A Variable Drivability (VD) Output Buffer for the System In a Package (SIP) and High Frequency Wafer Test (2003)
    • A Variable Drivability (VD) Output Buffer for the System In a Package (SIP) and High Frequency Wafer Test (2003)
    • Ultra Small Core Size and Low Power Embedded DRAM Macro for Images Data Processing System LSIs in Mobile Applications (2001)
  • TOMISHIMA Shigeki ID: 9000004778604

    ULSl Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:5

    • SOI-DRAM Circuit Technologies for Low Power High Speed Multi-giga Scale Memories (1995)
    • Low Voltage / Low Power SOI-DRAM with Multiple Body Control Circuits (1996)
    • 256Mbit DRAM with Boosted Sense Ground (1994)
  • Tomishima Shigeki ID: 9000004872622

    ULSI Laboratory, Mitsubishi Electric Corporation (1994 from CiNii)

    Articles in CiNii:1

    • A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994)) (1994)
  • Tomishima Shigeki ID: 9000006921036

    R & D, Micron Technology, Inc (2008 from CiNii)

    Articles in CiNii:1

    • CT-2-2 Technology Challenges in scaling DRAM into 4Xnm-3Xnm-2Xnm generations (2008)
  • Tomishima Shigeki ID: 9000254567385

    Department of Material Physics, Faculty of Engineering Science, Osaka University (1990 from CiNii)

    Articles in CiNii:1

    • Electronic Band Structures for Non-Magnetic and Ferromagnetic States of Transition-Metal Intercalation Compound Mn<SUB>1⁄4</SUB>TaS<SUB>2</SUB> (1990)
  • Tomishima Shigeki ID: 9000401862295

    Department of Material Physics, Faculty of Engineering Science, Osaka University, Toyonaka 560 (1990 from CiNii)

    Articles in CiNii:1

    • Electronic Band Structures for Non-Magnetic and Ferromagnetic States of Transition-Metal Intercalation Compound Mn1/4TaS2 (1990)
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