Search Results1-20 of  21

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  • Tomita Mitsuhiro ID: 9000010130259

    Articles in CiNii:1

    • Depth Resolution Parameters and Sputtering Rates Extracted from Amorphous and Crystalline Silicon Materials for SIMS Shallow Depth Profiling (2005)
  • TOMITA MITSUHIRO ID: 9000253160524

    Research and Development Center, Toshiba Corporation (1991 from CiNii)

    Articles in CiNii:1

    • QUANTITATIVE ANALYSIS OF GaAlAs COMPOSITION AND ITS DOPANT CONCENTRATION BY Cs CLUSTER ION MASS SPECTROMETRY (1991)
  • TOMITA Mitsuhiro ID: 9000000490541

    (株)東芝横浜事業所環境技術研究所材料応用技術センター (1997 from CiNii)

    Articles in CiNii:1

    • Secondary Ion Mass Spectrometry for Semiconductor Materials. (1997)
  • TOMITA Mitsuhiro ID: 9000002168729

    Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation (2006 from CiNii)

    Articles in CiNii:2

    • Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces (2005)
    • High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy (2006)
  • TOMITA Mitsuhiro ID: 9000004506013

    Corporate Research and Development Center, Toshiba Corporation (2010 from CiNii)

    Articles in CiNii:11

    • "Potentiality of TEM-EELS" as a measurement method for dielectric properties and electronic states of insulating films (2005)
    • Ultra-thin LaAlO_3 Gate Dielectrics Directly Deposited on Si Substrates for Advanced LSIs (2007)
    • Production and Applications of Metal-cluster-complex Ion Beams (2009)
  • TOMITA Mitsuhiro ID: 9000004740524

    Nippon Dynamic System Co.,Ltd. (2012 from CiNii)

    Articles in CiNii:41

    • Video Synthesis based on Flocking-behavior from One Object of Real Movie (2009)
    • A Pilot Frame Assisted CDMA System using Gold Sequences (1999)
    • A Pilot Frame Assisted CDMA System using Gold Sequences (1999)
  • TOMITA Mitsuhiro ID: 9000005588301

    Environmental Engineering Laboratory, R&D Center, Toshiba Corporation (1998 from CiNii)

    Articles in CiNii:3

    • Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions (1996)
    • Precipitation of Boron in Highly Boron-Doped Silicon (1998)
    • Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions (1997)
  • TOMITA Mitsuhiro ID: 9000006382787

    Tokyo University of Technology (2007 from CiNii)

    Articles in CiNii:1

    • A Multi-rate CDMA System with Block-Spreading Schemes for Anti-Interference and High Frequency Efficiency (2007)
  • TOMITA Mitsuhiro ID: 9000238422789

    日本ダイナミックシステム株式会社 (2012 from CiNii)

    Articles in CiNii:1

    • A-4-18 Tracking method of moving objects with the likelihood of the subregions (2012)
  • TOMITA Mitsuhiro ID: 9000256919020

    Nihon Dynamic System Co., Ltd (2012 from CiNii)

    Articles in CiNii:1

    • Tracking method of soccer players with the likelihood of the subregion (2012)
  • TOMITA Mitsuhiro ID: 9000257983189

    Tohiba Corporation, Corporate Research and Development Center, Advanced LSI Technology Laboratory (2007 from CiNii)

    Articles in CiNii:1

    • Ultra-thin LaAlO<sub>3</sub> Gate Dielectrics Directly Deposited on Si Substrates for Advanced LSIs (2007)
  • Tomita Mitsuhiro ID: 9000047410755

    Articles in CiNii:1

    • Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry (2009)
  • Tomita Mitsuhiro ID: 9000053054516

    Articles in CiNii:1

    • Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+ (2007)
  • Tomita Mitsuhiro ID: 9000258136412

    Environmental Engineering Laboratory, Toshiba Corporation, 1 Komukai, Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions. (1997)
  • Tomita Mitsuhiro ID: 9000258140995

    Environmental Engineering Laboratory, R&D Center, Toshiba Corporation, 1, Komukai–Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Precipitation of Boron in Highly Boron-Doped Silicon. (1998)
  • Tomita Mitsuhiro ID: 9000401662723

    Articles in CiNii:1

    • Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions (1997)
  • Tomita Mitsuhiro ID: 9000401670639

    Articles in CiNii:1

    • Precipitation of Boron in Highly Boron-Doped Silicon (1998)
  • Tomita Mitsuhiro ID: 9000401756629

    Articles in CiNii:1

    • Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source (2006)
  • Tomita Mitsuhiro ID: 9000401766455

    Articles in CiNii:1

    • Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+ (2007)
  • Tomita Mitsuhiro ID: 9000402018383

    Articles in CiNii:1

    • 2013-10-01 (2013)
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