Search Results1-5 of  5

  • TOYABE Tohru ID: 9000005527581

    Department of Information and Computer Science, Toyo University:Bio-Nano Electronics Research Center, Toyo University (1997 from CiNii)

    Articles in CiNii:3

    • Single Electron Device with Asymmetric Tunnel Barriers (1996)
    • Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices (1997)
    • Two-dimensional Analysis of Vertical Junction Gate FET's : A-4: FIELD EFFECT TRANSISTORS (I) (1976)
  • Toyabe Tohru ID: 9000258132116

    Department of Information and Computer Science, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Single Electron Device with Asymmetric Tunnel Barriers. (1996)
  • Toyabe Tohru ID: 9000283167386

    Department of Information and Computer Science, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350, Japan|Bio–Nano Electronics Research Center, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices. (1997)
  • Toyabe Tohru ID: 9000401655099

    Articles in CiNii:1

    • Single Electron Device with Asymmetric Tunnel Barriers (1996)
  • Toyabe Tohru ID: 9000401665044

    Articles in CiNii:1

    • Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices (1997)
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