Search Results1-20 of  39

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  • TSUBOUCHI Natsuro ID: 9000001454529

    Institute of Free Electron Laser, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:4

    • Recovery of Silicon by Coherent Phonon Excited by Free Electron Laser Irradiation (2005)
    • 技術解説 自由電子レーザーが拓く光量子科学の世界 (2000)
    • 技術解説 自由電子レーザー応用研究の現状と将来--半導体,バイオメディカル応用を中心として (2002)
  • TSUBOUCHI Natsuro ID: 9000004811861

    ULSI Laboratory, Mitsubishi Electric Corporation (1997 from CiNii)

    Articles in CiNii:5

    • Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect (1995)
    • The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (1997)
    • The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly Reliable and High-Performance Sub-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor (1995)
  • TSUBOUCHI Natsuro ID: 9000005734809

    ULSI Laboratory, Mitsubishi Electric Corporation (1995 from CiNii)

    Articles in CiNii:1

    • A 0.4μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories (1995)
  • TSUBOUCHI Natsuro ID: 9000045781999

    ULSI Laboratory, Mitsubishi Electric Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure (1994)
  • TSUBOUCHI Natsuro ID: 9000107308443

    Articles in CiNii:1

    • Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories (2000)
  • TSUBOUCHI Natsuro ID: 9000253688522

    LSI Research & Development Laboratory, Mitsubishi Electric Corporation (1986 from CiNii)

    Articles in CiNii:1

    • Silicon Schottky-Barrier Infrared Image Sensors (1986)
  • TSUBOUCHI Natsuro ID: 9000257902159

    Institute of Free Electron Laser, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Recovery of Silicon by Coherent Phonon Excited by Free Electron Laser Irradiation (2005)
  • Tsubouchi Natsuro ID: 9000004779531

    ULSI Laboratory,Mitsubishi Electric Corporation (1994 from CiNii)

    Articles in CiNii:16

    • 8ビット並列処理マイクロプロセッサとそのLSI (マイクロコンピュ-タ<特集>) (1975)
    • モノリシック赤外線CCD (半導体センサの最新テクノロジ-<特集>) (1987)
    • イメ-ジセンサの技術動向 (センシング技術<特集>) (1990)
  • Tsubouchi Natsuro ID: 9000021704009

    Articles in CiNii:1

    • Special Edition. Special Image Pick up Technique. 4. Invisible Light Cameras. 4-1. Infrared Camera. (1992)
  • Tsubouchi Natsuro ID: 9000021711181

    Articles in CiNii:1

    • Quantitative Evaluation Technique of Narrow Width Effects on DD(Deep Depletion) MOSFETs and BCCDs. (1993)
  • Tsubouchi Natsuro ID: 9000252757860

    LSI Research and Development Laboratory, Mitsubishi Electric Corporation (1983 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices (1983)
  • Tsubouchi Natsuro ID: 9000252978792

    LSI Research and Development Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory (1991)
  • Tsubouchi Natsuro ID: 9000252978841

    Articles in CiNii:1

    • Optimization of Nitridation and Reoxidation Conditions for an EEPROM Tunneling Dielectric (1991)
  • Tsubouchi Natsuro ID: 9000258120848

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami 664 (1994 from CiNii)

    Articles in CiNii:1

    • Application of Proximity Effect Correction Using Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure. (1994)
  • Tsubouchi Natsuro ID: 9000258125660

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly Reliable and High-Performance Sub-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor. (1995)
  • Tsubouchi Natsuro ID: 9000258125744

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influence on Short-Channel Effects in SOI MOSFET's. (1995)
  • Tsubouchi Natsuro ID: 9000258125842

    ULSI Laboratory, Mitsubishi Electric Corporation, Mizuhara 4–1, Itami 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • A 0.4.MU.m Gate-All-Around TFT(GAT) Using a Dummy Nitride Pattern for High-Density Memories. (1995)
  • Tsubouchi Natsuro ID: 9000258126226

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation. (1995)
  • Tsubouchi Natsuro ID: 9000258151536

    ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories. (2000)
  • Tsubouchi Natsuro ID: 9000283158120

    Articles in CiNii:1

    • Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs. (1994)
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