Search Results1-7 of  7

  • TSUDA Michinobu ID: 9000001534331

    Faculty of Science and Technology, 21st Century COE "Nano-Factory", Meijo University （2005 from CiNii）

    Articles in CiNii:20

    • Microstructure of ELO-AlN grown by HT-MOVPE （2005）
    • Characterization of low dislocation density GaN grown on sapphire R-plane substrate （2005）
    • MOVPE of GaN on R-plane sapphire with high-growth rate （2005）
  • TSUDA Michinobu ID: 9000016494945

    Department of Materials Science and Engineering, and Nano-factory, Meijo University:Kyocera Corporation （2006 from CiNii）

    Articles in CiNii:1

    • Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT （2006）
  • TSUDA Michinobu ID: 9000107341732

    Single Crystal Division, Kyocera Corporation （2005 from CiNii）

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer （2005）
  • Tsuda Michinobu ID: 9000024957646

    Articles in CiNii:1

    • Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire （2006）
  • Tsuda Michinobu ID: 9000258182611

    Single Crystal Division, Kyocera Corporation|Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University （2005 from CiNii）

    Articles in CiNii:1

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer （2005）
  • Tsuda Michinobu ID: 9000283194000

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University|Single Crystal Division, Kyocera Corporation （2005 from CiNii）

    Articles in CiNii:1

    • Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate （2005）
  • Tsuda Michinobu ID: 9000401737648

    Articles in CiNii:1

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer （2005）
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