Search Results1-6 of  6

  • TSUGE Sadaji ID: 9000404507757

    Materials and Devices Development Center Business Unit, Technology R&D Headquarters, Sanyo Electric Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Development and improvement of HIT (c-Si/a-Si heterojunction) solar cell (2003)
  • TSUGE Sadaji ID: 9000001033231

    Materials and Devices Development Center Business Unit, Technology R&D Headquarters, Sanyo Electric Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Development and improvement of HIT (c-Si/a-Si heterojunction) solar cell (2003)
  • Tsuge Sadaji ID: 9000258121351

    Functional Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573 (1994 from CiNii)

    Articles in CiNii:1

    • High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment. (1994)
  • Tsuge Sadaji ID: 9000258123321

    New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573 (1994 from CiNii)

    Articles in CiNii:1

    • Effect of Heating SiH4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon. (1994)
  • Tsuge Sadaji ID: 9000401640493

    Articles in CiNii:1

    • High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment (1994)
  • Tsuge Sadaji ID: 9000401642645

    Articles in CiNii:1

    • Effect of HeatingSiH4on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon (1994)
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