Search Results1-18 of  18

  • Tsuruoka Tohru ID: 9000018976368

    Articles in CiNii:1

    • Electronic State Formation by Surface Atom Removal on a MoS₂ Surface (Special Issue : Microprocesses and Nanotechnology) (2012)
  • TSURUOKA Tohru ID: 9000000817368

    Research Institute of Electrical Communication, Tohoku University (2004 from CiNii)

    Articles in CiNii:2

    • Electron Energy Loss Spectra Showing the Effects of Surface Roughness and Electromagnetic Retardation : Theory and Experiment (2001)
    • Optical characterization of individual semiconductor nanostructures using a scanning tunneling microscope (2004)
  • TSURUOKA Tohru ID: 9000019005307

    Articles in CiNii:6

    • Instrumentation using Near-Field Light and its Application (2006)
    • Metal Nanowire Formation by Solid-Electrochemical Reaction and Its Device Application (2009)
    • Atom transistor (2012)
  • TSURUOKA Tohru ID: 9000107338406

    WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science (2011 from CiNii)

    Articles in CiNii:1

    • Volatile/Nonvolatile Dual-Functional Atom Transistor (2011)
  • Tsuruoka Tohru ID: 9000065106303

    Articles in CiNii:1

    • Electronic States of Sulfur Vacancies Formed on a MoS2Surface (2010)
  • Tsuruoka Tohru ID: 9000258195735

    Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (2001 from CiNii)

    Articles in CiNii:1

    • Electron Energy Loss Spectra Showing the Effects of Surface Roughness and Electromagnetic Retardation. Theory and Experiment. (2001)
  • Tsuruoka Tohru ID: 9000391851843

    National Institute for Materials Science (2006 from CiNii)

    Articles in CiNii:1

    • Synthesis of Silicon Quantum Dot Encapsulated with Organic Monolayer (2006)
  • Tsuruoka Tohru ID: 9000401569669

    Articles in CiNii:1

    • Volatile/Nonvolatile Dual-Functional Atom Transistor (2010)
  • Tsuruoka Tohru ID: 9000401806599

    Articles in CiNii:1

    • Electronic State Formation by Surface Atom Removal on a MoS$_{2}$ Surface (2012)
  • Tsuruoka Tohru ID: 9000401886139

    Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (2001 from CiNii)

    Articles in CiNii:1

    • 2001-07-15 (2001)
  • Tsuruoka Tohru ID: 9000401981112

    Articles in CiNii:1

    • 2017-06-26 (2017)
  • Tsuruoka Tohru ID: 9000402007467

    Articles in CiNii:1

    • Electronic State Formation by Surface Atom Removal on a MoS2Surface (2012)
  • Tsuruoka Tohru ID: 9000402019096

    Articles in CiNii:1

    • Optical Measurement for Solid- and Liquid-Phase Sb2Te3around Its Melting Point (2013)
  • Tsuruoka Tohru ID: 9000402036821

    Articles in CiNii:1

    • Composition of thin Ta2O5films deposited by different methods and the effect of humidity on their resistive switching behavior (2016)
  • Tsuruoka Tohru ID: 9000402036915

    Articles in CiNii:1

    • Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure (2016)
  • Tsuruoka Tohru ID: 9000402036957

    Articles in CiNii:1

    • Direct observation of anodic dissolution and filament growth behavior in polyethylene-oxide-based atomic switch structures (2016)
  • Tsuruoka Tohru ID: 9000402042848

    Articles in CiNii:1

    • Quantized conductance operation near a single-atom point contact in a polymer-based atomic switch (2017)
  • Tsuruoka Tohru ID: 9000402046914

    Articles in CiNii:1

    • The rate limiting process and its activation energy in the forming process of a Cu/Ta2O5/Pt gapless-type atomic switch (2018)
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