Search Results1-20 of  20

  • Tachibana Tomihisa ID: 9000018226985

    Articles in CiNii:1

    • Material research on high-quality passivation layers with controlled fixed charge for crystalline silicon solar cells (Special issue: Solid state devices and materials) (2011)
  • Tachibana Tomihisa ID: 9000025126338

    Articles in CiNii:1

    • Study of the degradation of p-n diode characteristics caused by small-angle grain boundaries in multi-crystalline silicon substrate for solar cells (2009)
  • Tachibana Tomihisa ID: 9000241497953

    Articles in CiNii:1

    • Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials) (2013)
  • TACHIBANA Tomihisa ID: 9000019140728

    Meiji University (2012 from CiNii)

    Articles in CiNii:2

    • Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells (2012)
    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (Special Issue : Solid State Devices and Materials (1)) (2012)
  • TACHIBANA Tomihisa ID: 9000263068905

    Meiji University (2013 from CiNii)

    Articles in CiNii:1

    • Formation of Si_2N_2O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon (2013)
  • TACHIBANA Tomihisa ID: 9000318134203

    Toyota Technological Institute (2015 from CiNii)

    Articles in CiNii:1

    • Passivation Technologies for High Efficiency Crystalline Silicon Solar Cells (2015)
  • Tachibana Tomihisa ID: 9000401572746

    Articles in CiNii:1

    • Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells (2012)
  • Tachibana Tomihisa ID: 9000401783988

    Articles in CiNii:1

    • 2009-12-21 (2009)
  • Tachibana Tomihisa ID: 9000401796700

    Articles in CiNii:1

    • Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells (2011)
  • Tachibana Tomihisa ID: 9000401804186

    Articles in CiNii:1

    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (2012)
  • Tachibana Tomihisa ID: 9000401805600

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO$_{x}$ (2012)
  • Tachibana Tomihisa ID: 9000401997569

    Articles in CiNii:1

    • Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells (2011)
  • Tachibana Tomihisa ID: 9000402005048

    Articles in CiNii:1

    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (2012)
  • Tachibana Tomihisa ID: 9000402006468

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx (2012)
  • Tachibana Tomihisa ID: 9000402014250

    Articles in CiNii:1

    • Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (2013)
  • Tachibana Tomihisa ID: 9000402022422

    Articles in CiNii:1

    • Nickel distribution and recombination activity in as-grown and annealed multicrystalline silicon (2014)
  • Tachibana Tomihisa ID: 9000402026514

    Articles in CiNii:1

    • Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon (2014)
  • Tachibana Tomihisa ID: 9000402031513

    Articles in CiNii:1

    • X-ray evaluation of electronic and chemical properties and film structures in SiN passivation layer on crystalline Si solar cells (2015)
  • Tachibana Tomihisa ID: 9000402031526

    Articles in CiNii:1

    • Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method (2015)
  • Tachibana Tomihisa ID: 9000402047351

    Articles in CiNii:1

    • Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method (2018)
Page Top