Search Results1-20 of  53

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  • TACKEUCHI Atsushi ID: 9000005551151

    Department of Applied Physics, Waseda University (1999 from CiNii)

    Articles in CiNii:8

    • InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling (1995)
    • Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-Quantum Wells (1998)
    • Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells (1999)
  • TACKEUCHI Atsushi ID: 9000005651470

    Department of Applied Physics, Waseda University (1999 from CiNii)

    Articles in CiNii:1

    • Electron Spin Relaxation in GaAs/AlGaAs Quantum Wires Analyzed by Transient Photoluminescence (1999)
  • TACKEUCHI Atsushi ID: 9000005659860

    Max-Planck-Institut fur Festkorperforschung:(Permanent address)Fujitsu Laboratories Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells (1995)
  • TACKEUCHI Atsushi ID: 9000253694714

    Fujitsu Laboratories, Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Picosecond All-Optical Switching of a Quantum Well Etalon Using Spin-Polarizaiton Relaxation. (1995)
  • Tackeuchi Atsushi ID: 9000025032650

    Articles in CiNii:1

    • Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates (2010)
  • Tackeuchi Atsushi ID: 9000025097020

    Articles in CiNii:1

    • Spin-polarized localized exciton photoluminescence dynamics in GaInNAs quantum wells (2009)
  • Tackeuchi Atsushi ID: 9000068471284

    Articles in CiNii:1

    • Transition from Excitonic Tunneling to Free Carrier Tunneling in GaAs/AlGaAs Double Quantum Wells (2007)
  • Tackeuchi Atsushi ID: 9000252761432

    Articles in CiNii:1

    • Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling (1989)
  • Tackeuchi Atsushi ID: 9000252761839

    Fujitsu Laboratories Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling (1989)
  • Tackeuchi Atsushi ID: 9000252764735

    Fujitsu Laboratories Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures (1991)
  • Tackeuchi Atsushi ID: 9000252971141

    Fujitsu Laboratories Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures (1989)
  • Tackeuchi Atsushi ID: 9000252976104

    Fujitsu Laboratories Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures (1991)
  • Tackeuchi Atsushi ID: 9000252980516

    Fujitsu Laboratories Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells (1992)
  • Tackeuchi Atsushi ID: 9000252983749

    Fujitsu Laboratories Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • Fast Recovery from Excitonic Absorption Bleaching in Type-II GaAs/AlGaAs/AlAs Tunneling Biquantum Well (1992)
  • Tackeuchi Atsushi ID: 9000252983936

    Fujitsu Laboratories Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography (1992)
  • Tackeuchi Atsushi ID: 9000258124753

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon. (1995)
  • Tackeuchi Atsushi ID: 9000258126915

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Near-1.3-.MU.m High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots. (1995)
  • Tackeuchi Atsushi ID: 9000258127149

    Max–Planck–Institut für Festkörperforschung, Heisenbergstr. 1, D–70569 Stuttgart, Germany (1995 from CiNii)

    Articles in CiNii:1

    • Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells. (1995)
  • Tackeuchi Atsushi ID: 9000258128817

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate. (1995)
  • Tackeuchi Atsushi ID: 9000258148326

    Department of Applied Physics, Waseda University, 3–4–1 Ohkubo, Shinjuku, Tokyo 169–8555, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells (1999)
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