Search Results1-10 of  10

  • Ohachi Tadashi ID: 9000015772835

    Articles in CiNii:1

    • Formation of Gallium Nitride(GaN) Crystals by Plasma Bombardment (2003)
  • Ohachi Tadashi ID: 9000025121667

    Articles in CiNii:1

    • Improvement of plasma-assisted molecular beam epitaxial growth of group 3 nitrides on Si controlling radio frequency discharge modes and irradiation of nitrogen flux (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials) (2011)
  • OHACHI Tadashi ID: 1000040066270

    Articles in CiNii:169

    • Electrical Nucleation and Crystal Growth under Micro Gravity of Supercooled Concentrated Solution of Sodium Acetate Trihydrate (1996)
    • Observation of Interference Fringe at the Interface of Supercooled Concentrated Solution of Sodium Acetate Trihydrate and Its Electrical Nucleation under Micro Gravity (1997)
    • Admittance Characteristics of Au/P-Si Schottky Diode with Damage Induced by Reactive Ion Ecthing (1992)
  • OHACHI Tadashi ID: 9000002634058

    同志社大学工学部 (2003 from CiNii)

    Articles in CiNii:4

    • Thin Film Formation of GaN using Ga Sputtering in N2 Plasmas (2003)
    • Formation of Gallium Nitride(GaN)Crystals by Plasma Bombardment (2003)
    • Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system (2002)
  • OHACHI Tadashi ID: 9000020184274

    Articles in CiNii:1

    • Preparation of Whiskers of A<sub>1-x</sub>Ti<sub>2+x</sub>M<sub>5-x</sub>O<sub>12</sub> (A=Na, K and M=Al, Ga) (1990)
  • OHACHI Tadashi ID: 9000020584011

    Articles in CiNii:1

    • Synthesis of a New Compound K<sub>x</sub>[Ga<sub>8</sub>Ga<sub>8+x</sub>Ti<sub>16-x</sub>O<sub>56</sub>] (1986)
  • Ohachi Tadashi ID: 9000004337246

    Articles in CiNii:20

    • 硫化物スピネルの合成およびイオン伝導 (1979)
    • 酢酸ナトリウム3水和物水溶液の電気核形成と成長カイネティクス (原子レベルでの結晶成長機構) -- (核形成と成長のカイネティクス) (1994)
    • 分子線エピタキシャル(MBE)法によるSi基板上への3族窒化物ヘテロエピタキシャル成長 (第41回同志社大学理工学研究所研究発表会,2003年度同志社大学ハイテク・リサーチ,学術フロンティア合同シンポジウム講演予稿集) (2004)
  • Ohachi Tadashi ID: 9000365080343

    Interface reaction epitaxy laboratory (2016 from CiNii)

    Articles in CiNii:1

    • Basic Theory of Epitaxy: Step Dynamics and Thermodynamics (2016)
  • Ohachi Tadashi ID: 9000401793811

    Articles in CiNii:1

    • Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux (2011)
  • Ohachi Tadashi ID: 9000401994681

    Articles in CiNii:1

    • Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux (2011)
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