Search Results1-20 of  81

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  • Takagi Shin-ichi ID: 9000024933719

    Articles in CiNii:1

    • Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • Takagi Shin-ichi ID: 9000025032336

    Articles in CiNii:1

    • Experimental determination of shear stress induced electron mobility enhancements in Si and biaxially strained-Si metal-oxide-semiconductor field-effect transistors (2010)
  • TAKAGI Shin'ichi ID: 9000004861797

    Waseda University:(Present address)NTT-East (2000 from CiNii)

    Articles in CiNii:1

    • A Method to Reduce the External Blocking in the Batcher Banyan Network with Incomplete Copy Network (2000)
  • TAKAGI Shin'ichi ID: 9000257778481

    Graduate School of Global Information and Telecommunication Studies, WASEDA University (2003 from CiNii)

    Articles in CiNii:1

    • A Proposal and Implementation of Video Editing System using Web Browser over Broadband Network (2003)
  • TAKAGI Shin'ichi ID: 9000347042699

    Graduate School of Global Information and Telecommunication Studies,Waseda University (2004 from CiNii)

    Articles in CiNii:1

    • Study on Detection Method of Same Part between Videos Using Color Information Correlation of Video Shot (2004)
  • TAKAGI Shin'ichi ID: 9000347042833

    Graduate School of Global Information and Telecommunication Studies,Waseda Univ. (2004 from CiNii)

    Articles in CiNii:1

    • Color Correction Method based on Color Information of Image Including Color Chart (2004)
  • TAKAGI Shin-ichi ID: 9000000354454

    Kanagawa Industrial Technology Research Institute (2000 from CiNii)

    Articles in CiNii:1

    • Void Formation by the Reactive Diffusion of Titanium and Aluminum Foils (2000)
  • TAKAGI Shin-ichi ID: 9000000508939

    Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:4

    • Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N_2O and NO Oxynitrides (2001)
    • Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100nm Regime (2001)
    • Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N_2O and NO Oxynitrides (2000)
  • TAKAGI Shin-ichi ID: 9000001505781

    Advanced LSI Technology Laboratory, Toshiba Corp. (2001 from CiNii)

    Articles in CiNii:1

    • Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current (2001)
  • TAKAGI Shin-ichi ID: 9000001506389

    Advanced LSI Technology Laboratory, Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current (2001)
  • TAKAGI Shin-ichi ID: 9000001720453

    ULSI Research Laboratories, TOSHIBA Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Two Correlated Mechanisms in Thin SiO_2 Breakdown (1996)
  • TAKAGI Shin-ichi ID: 9000001720647

    ULSI Research Laboratories, TOSHIBA Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS (1996)
  • TAKAGI Shin-ichi ID: 9000001720679

    ULSI Research Laboratories, TOSHIBA Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching (1996)
  • TAKAGI Shin-ichi ID: 9000002166088

    Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport (2004)
  • TAKAGI Shin-ichi ID: 9000002168076

    Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides (2004)
  • TAKAGI Shin-ichi ID: 9000002170204

    MIRAI-ASRC (2007 from CiNii)

    Articles in CiNii:4

    • Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs (2005)
    • Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces (2006)
    • High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate (2007)
  • TAKAGI Shin-ichi ID: 9000002174604

    Graduate School of Frontier Science, The University of Tokyo (2006 from CiNii)

    Articles in CiNii:1

    • Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs (2006)
  • TAKAGI Shin-ichi ID: 9000002174965

    Graduate School of Frontier Science, The University of Tokyo (2007 from CiNii)

    Articles in CiNii:1

    • Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method (2007)
  • TAKAGI Shin-ichi ID: 9000002175035

    MIRAI-ASRC (2007 from CiNii)

    Articles in CiNii:1

    • Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs (2007)
  • TAKAGI Shin-ichi ID: 9000004822865

    MIRAI-National Institute of Advanced Industrial Science and Technology (AIST) (2008 from CiNii)

    Articles in CiNii:8

    • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs (2001)
    • Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures (2001)
    • A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs (2000)
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