Search Results1-17 of  17

  • TAKAKURA Masaru ID: 9000000258988

    Articles in CiNii:2

    • Thin - Film Analysis with Electron Probe X- ray Micro Analyzer. (1999)
    • 講義 EPMAにおける薄膜分析 (2002)
  • TAKAKURA Masaru ID: 9000253648146

    Department of Electrical Engineering, Hiroshima University (1992 from CiNii)

    Articles in CiNii:1

    • Oxidation of Hydrogen-Terminated Si Surfaces. (1992)
  • TAKAKURA Masaru ID: 9000305611749

    JEOL Ltd, (2013 from CiNii)

    Articles in CiNii:3

    • Application of the FE-EPMA to Failure Analysis of High-Temperature Corrosion Mechanism (2007)
    • Principle and Application of EPMA (2008)
    • 20612 Failure Mechanism by Hot Corrosion of Superheater Tube Alloy 625 in High-Efficiency Waste-to-Power Plant Boilers (2013)
  • Takakura Masaru ID: 9000252762540

    Department of Electrical Engineering, Hiroshima University (1990 from CiNii)

    Articles in CiNii:1

    • Chemical Bonding Features of Fluorine and Boron in BF<SUB>2</SUB><SUP>+</SUP>-Ion-Implanted Si (1990)
  • Takakura Masaru ID: 9000252762649

    Department of Electrical Engineering, Hiroshima University (1990 from CiNii)

    Articles in CiNii:1

    • The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces (1990)
  • Takakura Masaru ID: 9000252764015

    Department of Electrical Engineering, Hiroshima University (1991 from CiNii)

    Articles in CiNii:1

    • BF<SUB>2</SUB><SUP>+</SUP> Ion Implantation into Very-Low-Temperature Si Wafer (1991)
  • Takakura Masaru ID: 9000252965589

    Department of Electrical Engineering, Hiroshima University (1988 from CiNii)

    Articles in CiNii:1

    • Early Stage of Silicon Oxidation Studied by <I>in situ</I> X-Ray Photoelectron Spectroscopy (1988)
  • Takakura Masaru ID: 9000252970030

    Articles in CiNii:1

    • In-Depth Profiling of Suboxide Compositions in the SiO<SUB>2</SUB>/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy (1989)
  • Takakura Masaru ID: 9000392696095

    Articles in CiNii:1

    • Early Stage of Silicon Oxidation Studied by <I>in situ</I> X-Ray Photoelectron Spectroscopy (1988)
  • Takakura Masaru ID: 9000392721499

    Articles in CiNii:1

    • The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces (1990)
  • Takakura Masaru ID: 9000392721748

    Articles in CiNii:1

    • Chemical Bonding Features of Fluorine and Boron in BF<SUB>2</SUB><SUP>+</SUP>-Ion-Implanted Si (1990)
  • Takakura Masaru ID: 9000392725399

    Articles in CiNii:1

    • BF<SUB>2</SUB><SUP>+</SUP> Ion Implantation into Very-Low-Temperature Si Wafer (1991)
  • Takakura Masaru ID: 9000401609765

    Articles in CiNii:1

    • Early Stage of Silicon Oxidation Studied byin situX-Ray Photoelectron Spectroscopy (1988)
  • Takakura Masaru ID: 9000401615010

    Articles in CiNii:1

    • In-Depth Profiling of Suboxide Compositions in the SiO2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy (1989)
  • Takakura Masaru ID: 9000401620000

    Articles in CiNii:1

    • Chemical Bonding Features of Fluorine and Boron in BF2+-Ion-Implanted Si (1990)
  • Takakura Masaru ID: 9000401620103

    Articles in CiNii:1

    • The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces (1990)
  • Takakura Masaru ID: 9000401623901

    Articles in CiNii:1

    • BF2+Ion Implantation into Very-Low-Temperature Si Wafer (1991)
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