Search Results1-20 of  70

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  • Takeyama Mayumi B. ID: 9000025098574

    Articles in CiNii:1

    • Oxidation Characteristics of Thin Al-Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu (Special Issue : Advanced Metallization for ULSI Applications) (2012)
  • Takeyama Mayumi B. ID: 9000025117334

    Articles in CiNii:1

    • Evolution of microstructures in nanocrystalline VN barrier leading to failure in Cu/VN/SiO2/Si systems (Special issue: Advanced metallization for ULSI applications) (2010)
  • Takeyama Mayumi B. ID: 9000025117741

    Articles in CiNii:1

    • Reactively sputtered nanocrystalline ZrN film as extremely thin diffusion barrier between Cu and SiO2 (Special issue: Advanced metallization for ULSI applications) (2010)
  • B. Takeyama Mayumi ID: 9000396113570

    Kitami Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Evaluation of Ezoshika Meat by Using Cole-Cole Plot (2018)
  • Mayumi B Takeyama ID: 9000402231874

    Articles in CiNii:1

    • Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy (2019)
  • TAKEYAMA Mayumi B. ID: 9000001181743

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration (2003)
  • TAKEYAMA Mayumi B. ID: 9000004746237

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2006 from CiNii)

    Articles in CiNii:6

    • Structural Analyses of Cu[111]Layer on Nb[110] Barrier Formed on Si0_2 (2003)
    • Structural Analyses of Cu[111]Layer on Nb[110] Barrier Formed on Si0_2 (2003)
    • Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2 (2002)
  • TAKEYAMA Mayumi B. ID: 9000004824506

    Dept. of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of ZrN Barrier in W/ZrN/Poly-Si Gate Electrode Configuration (2001)
  • TAKEYAMA Mayumi B. ID: 9000005598388

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Effectiveness of Al_<12>W Layer on Suppression of Spontaneous Reaction in Al/Al_<12>W/W_2N/Si Contact Systems (1999)
  • TAKEYAMA Mayumi B. ID: 9000005744516

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP (1999)
  • TAKEYAMA Mayumi B. ID: 9000107325832

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2 (2004)
  • TAKEYAMA Mayumi ID: 1000080236512

    Articles in CiNii:107

    • ラジカルを用いた低温で安価な窒化物膜の作製とコーティングへの応用 (特集 新素材・ナノテクのライセンス技術) (2009)
    • Low temperature deposition of NfNx film by radical reaction (2015)
    • Characteristic of TiNx film by low temperature deposition using radical treatment (2016)
  • TAKEYAMA Mayumi ID: 9000005541892

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1996 from CiNii)

    Articles in CiNii:5

    • Effects of Al_3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems (1996)
    • Oxidation Characteristics of Al-Ta Thin Alloy Films as a Passivation Layer on Cu (1996)
    • Transmission Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_<2-x> Layer in Al (001)/YSi_<2-x>/Si (001) Systems (1996)
  • TAKEYAMA Mayumi ID: 9000005581635

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Preparation of WN_x Films and Their Diffusin Barrier Properties in Cu/Si Contact Systems (1997)
  • TAKEYAMA Mayumi ID: 9000005581745

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Solid-Phase Reactions in Polymorphic Epitaxial Contact Systems of Al/YSi_<2-x>/Si (1997)
  • TAKEYAMA Mayumi B. ID: 9000004838201

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration(Electronic Materials) (2003)
  • Takeyama Mayumi B. ID: 9000025014530

    Articles in CiNii:1

    • Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2 (2006)
  • Takeyama Mayumi B. ID: 9000025034664

    Articles in CiNii:1

    • Application of extremely thin ZrN film as diffusion barrier between Cu and SiOC (Special issue: Nano electronic materials) (2008)
  • Takeyama Mayumi B. ID: 9000258146032

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090–8507, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP. (1999)
  • Takeyama Mayumi B. ID: 9000258146778

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090–8507, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Effectiveness of Al12W Layer on Suppression of Spontaneous Reaction in Al/Al12W/W2N/Si Contact Systems. (1999)
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