Search Results1-20 of  93

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  • Tanigaki Katsumi ID: 9000403927696

    Articles in CiNii:1

    • Three-dimensional porous graphene networks expand graphene-based electronic device applications (2017)
  • TANIGAKI Katsumi ID: 1000060305612

    WPI Advanced Institute for Materials Research, Tohoku University (2013 from CiNii)

    Articles in CiNii:171

    • 1996年度朝日賞 (1997)
    • Progress in molecular conductors and superconductors. (2001)
    • Structure and Properties of IV-group Polyhedral Crystals (2004)
  • TANIGAKI Katsumi ID: 9000003263103

    Fundamental Research Laboratories, NEC Corporation:(Present address) Department of Material Science, Faculty of Science, Osaka City University (1998 from CiNii)

    Articles in CiNii:2

    • NMR Studies on Orientational Ordering Phase Transition in Na_2CsC_<60> (1995)
    • Sub-10-nm Electron Beam Lithography Using a Poly(α-methystyrene)Resist with a Molecular Weight of 650 (1998)
  • TANIGAKI Katsumi ID: 9000017112548

    Dept. of Phys., Grad. Sch. of Sci., Tohoku Univ.:WPI-Tohoku Univ. (2011 from CiNii)

    Articles in CiNii:7

    • 20aGH-8 Effects of Cr Impurity on the Transport Properties of Iron Pnictide 122 phase BaFe_2As_2 (2010)
    • 24aRL-2 Possible phonon engineer in Type I clathrate Ba_8Ga_<16-x>Ge_<30+x> and Sr_8Ga_<16-x>Ge_<30+x> (2010)
    • 28pEE-8 Study on the hole-doped pnictide superconductors in the 1111 phase (2011)
  • TANIGAKI Katsumi ID: 9000019137101

    WPI-AIMR, Tohoku University (2012 from CiNii)

    Articles in CiNii:1

    • Properties of Materials with Regulated Nano Spaces (2012)
  • TANIGAKI Katsumi ID: 9000045460624

    Physics Department, Graduate School of Science, Tohoku University (2006 from CiNii)

    Articles in CiNii:1

    • Possible Low-Temperature Strongly Correlated Electron Behavior from Multipole Fluctuations in PrMg_3 with Cubic Non-Kramers Γ_3 Doublet Ground State (2006)
  • TANIGAKI Katsumi ID: 9000107350643

    WPI Advanced Institute for Materials Research, Tohoku University (2011 from CiNii)

    Articles in CiNii:1

    • Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points (2011)
  • TANIGAKI Katsumi ID: 9000253327757

    Graduate School of Science, Course In Materials Science, Osaka City University (2001 from CiNii)

    Articles in CiNii:1

    • Progress in molecular conductors and superconductors (2001)
  • TANIGAKI Katsumi ID: 9000253576223

    Fundamental Research Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Materials Based on Carbon Clusters. (1997)
  • TANIGAKI Katsumi ID: 9000256897159

    Tohoku University (2012 from CiNii)

    Articles in CiNii:1

    • Extrapolation for Structural Variety and Functions in Materials Having Nano Space Inside (2012)
  • Tanigaki Katsumi ID: 9000003378621

    NEC Corporation (1998 from CiNii)

    Articles in CiNii:5

    • 29p-J-3 Synthesis and Characterization of Si inclusion Compounds (1995)
    • Structure and Properties of BaxGe46 (1996)
    • 26p-M-11 Synthesis and Characterization of Sn Clathrates (1998)
  • Tanigaki Katsumi ID: 9000003430781

    Depatment of Material Science, Faculty of Science, Osaka City University:PRESTO, JST (2001 from CiNii)

    Articles in CiNii:1

    • 17aTJ-6 Electronic States of C60 and Mn-Oxide Perovskite Compounds (2001)
  • Tanigaki Katsumi ID: 9000003442277

    NEC Fundamental Research Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • 6a-D-6 Doping of Ba-inclusion Si/Ge Clathrates with Transition Metals (1997)
  • Tanigaki Katsumi ID: 9000003442333

    Fundamental Research Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:7

    • Materials Based on Carbon Clusters (1997)
    • Recent advances in fullerenes : C_<60> and nanotubes (1996)
    • C60・フラ-レンの構造と物性 (C60・フラ-レンの可能性<特集>) -- (研究最前線) (1995)
  • Tanigaki Katsumi ID: 9000005295679

    日本電気株式会社 基礎研究所研究課 (1992 from CiNii)

    Articles in CiNii:2

    • フラーレン超伝導体 (1992)
    • A High Photosensitivity CCD Image Sensor with Monolithic Resin Lens Array (1984)
  • Tanigaki Katsumi ID: 9000006973704

    WPI-AIMR, Tohoku University (2011 from CiNii)

    Articles in CiNii:6

    • 24aTG-5 Pressure effect on Structure of Ba_<24>Ge_<100> and Ba_<24>Si_<100> Clathrate (2008)
    • 27aYJ-4 EXPLORING BOTH ELECTRON- AND HOLE-DOPED FE BASED OXYPNICTIDES (2009)
    • 28pYG-9 Structure study of Layered SrAl_2Ge_2 Alloy (2009)
  • Tanigaki Katsumi ID: 9000014613569

    Tohoku University:WPI-Tohoku Univ. (2009 from CiNii)

    Articles in CiNii:1

    • 27pTC-13 Superconductivity in FeSe_x (x=0.6~1.0) series (2009)
  • Tanigaki Katsumi ID: 9000014652599

    Graduate School of Science Tohoku University:WPI-Tohoku University (2009 from CiNii)

    Articles in CiNii:1

    • 27aRH-6 Physical Properties of Electron-doped and Hole-doped PrFeAsO (2009)
  • Tanigaki Katsumi ID: 9000017113318

    WPI and Department of Physics, Graduate School of Science, Tohoku University (2011 from CiNii)

    Articles in CiNii:3

    • 22pGS-2 Ambipolar injection of carriers and its application to light emission in organic field effect transistors (2010)
    • 23pRL-15 Understanding of influence on Au-electrode surface modification by thiol SAMs in organic thin-film transistors (2010)
    • 22aTG-2 Enhancement of ambipolar transport behavior of organic field effect transistors by electron trap elimination (2011)
  • Tanigaki Katsumi ID: 9000017113349

    WPI Advanced Institute for Materials Research and Department of Physics, Tohoku University (2010 from CiNii)

    Articles in CiNii:2

    • 23aGS-10 Electrical characteristics of chemically-doped graphene (2010)
    • 23pRA-9 Experimental conditions to achieve efficient chemical modification of graphene (2010)
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