Search Results1-20 of  22

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  • Taniyasu Yoshitaka ID: 9000018880437

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials) （2012）
  • Taniyasu Yoshitaka ID: 9000025016452

    Articles in CiNii:1

    • Hexagonal AlN(0001) heteroepitaxial growth on cubic diamond(001) (Special issue: Solid state devices and materials) （2010）
  • TANIYASU Yoshitaka ID: 9000001995564

    NTT物性科学基礎研究所 （2007 from CiNii）

    Articles in CiNii:1

    • 窒化アルミニウム(AIN)発光ダイオード : 世界最短波長の半導体発光 （2007）
  • TANIYASU Yoshitaka ID: 9000002166997

    NTT Basic Research Laboratories, NTT Corporation （2005 from CiNii）

    Articles in CiNii:3

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates （2004）
    • Low-dislocation AlGaN thin films grown using Al_<1-x>Si_xN nano-disks (x=0.07-0.17) （2004）
    • Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors （2005）
  • TANIYASU Yoshitaka ID: 9000004777606

    NTT Basic Research Laboratories, NTT Corporation （2014 from CiNii）

    Articles in CiNii:13

    • Research on nitride semiconductors for deep-ultraviolet light sources （2007）
    • Diamond/Nitride Semiconductor Heterostructure : Growth and Properties （2010）
    • 窒化アルミニウムを用いた210nm遠紫外LED (特集 材料からのブレークスルー) （2006）
  • TANIYASU Yoshitaka ID: 9000006728285

    NTT Basic Research Laboratories, NTT Corporation （2001 from CiNii）

    Articles in CiNii:1

    • Formation of Solid Solution of Al_<1-x>Si_xN (0<x【less than or equal】12%) Ternary Alloy （2001）
  • TANIYASU Yoshitaka ID: 9000107343399

    NTT Basic Research Laboratories, NTT Corporation （2005 from CiNii）

    Articles in CiNii:1

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates （2005）
  • TANIYASU Yoshitaka ID: 9000404503884

    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation （2016 from CiNii）

    Articles in CiNii:1

    • Heteroepitaxial growth of cubic boron nitride (c-BN) thin films by ion-beam-assisted MBE （2016）
  • Taniyasu Yoshitaka ID: 9000025065556

    Articles in CiNii:1

    • Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) （2012）
  • Taniyasu Yoshitaka ID: 9000059321325

    Articles in CiNii:1

    • Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors （2006）
  • Taniyasu Yoshitaka ID: 9000258181241

    NTT Basic Research Laboratories, NTT Corporation （2005 from CiNii）

    Articles in CiNii:1

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates （2005）
  • Taniyasu Yoshitaka ID: 9000401702560

    Articles in CiNii:1

    • 2001-10-01 （2001）
  • Taniyasu Yoshitaka ID: 9000401736316

    Articles in CiNii:1

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates （2005）
  • Taniyasu Yoshitaka ID: 9000401787086

    Articles in CiNii:1

    • Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001) （2010）
  • Taniyasu Yoshitaka ID: 9000401803064

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate （2012）
  • Taniyasu Yoshitaka ID: 9000401980440

    Articles in CiNii:1

    • Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE （2017）
  • Taniyasu Yoshitaka ID: 9000401984095

    Articles in CiNii:1

    • Improved adaptive sampling method utilizing Gaussian process regression for prediction of spectral peak structures （2018）
  • Taniyasu Yoshitaka ID: 9000402003928

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate （2012）
  • Taniyasu Yoshitaka ID: 9000402009157

    Articles in CiNii:1

    • Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface （2012）
  • Taniyasu Yoshitaka ID: 9000402048079

    Articles in CiNii:1

    • High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content （2018）
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