Search Results1-20 of  24

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  • Terai Masayuki ID: 9000025016610

    Articles in CiNii:1

    • Physical model for reset state of Ta2O5/TiO2-stacked resistance random access memory (Special issue: Solid state devices and materials) (2010)
  • Terai Masayuki ID: 9000025120520

    Articles in CiNii:1

    • Effects of Si/Ni composition ratio of NixSiy gate electrode and Hf/Si composition ratio of Hf-based high-k insulator on threshold voltage controllability and mobility of metal-oxide-semiconductor field-effect transistors (2010)
  • Masayuki Terai ID: 9000398571163

    Articles in CiNii:1

    • Atomic Structural Analysis of a Monolayer Epitaxial Film of Hexagonal Boron Nitride/Ni(111) studied by LEED Intensity Analysis(Interfaces by various techniques) (1997)
  • TERAI Masayuki ID: 9000004334868

    Faculty of Informatics, Osaka Gakuin University (2007 from CiNii)

    Articles in CiNii:40

    • A Timing Driven Min-Cut Placement Algorithm (1992)
    • チャネル配線法における幹線分割の一手法 (1985)
    • マスタスライス方式レイアウトにおける横トラック数の考察 (1981)
  • TERAI Masayuki ID: 9000004790924

    Manufacturing Technology Division, Semiconductor Group, MITSUBISHI ELECTRIC CORPORATION (1997 from CiNii)

    Articles in CiNii:1

    • A New Rip-Up and Reroute Algorithm for Very Large Scale Gate Arrays (1997)
  • TERAI Masayuki ID: 9000005716441

    Manufacturing Technology Division, Mitsubishi Electric Corporation (1997 from CiNii)

    Articles in CiNii:1

    • A Fast Eliminating System of Narrow Electron-Beam Exposure-Figures for Improving Pattern Accuracy (1997)
  • TERAI Masayuki ID: 9000005818286

    Faculty of Informatics, Osaka Gakuin University (2007 from CiNii)

    Articles in CiNii:2

    • A Method of Precise Estimation of Physical Parameters in LSI Interconnect Structures (2005)
    • A Fast Characterizing Method for Large Embedded Memory Modules on SoC (2007)
  • TERAI Masayuki ID: 9000017689009

    Department of Informatics, Osaka Gakuin University (2008 from CiNii)

    Articles in CiNii:1

    • A Parallel Method to Extract Critical Areas of Net Pairs for Diagnosing Bridge Faults (2008)
  • TERAI Masayuki ID: 9000021581410

    Waseda University (1998 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1998)
  • TERAI Masayuki ID: 9000107344098

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • TERAI Masayuki ID: 9000107344129

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • TERAI Masayuki ID: 9000107344267

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • TERAI Masayuki ID: 9000253648806

    Department of Applied Physics, Waseda University (1996 from CiNii)

    Articles in CiNii:1

    • Atomic Structure of Monolayer Graphite Formed on Ni(111). (1996)
  • Terai Masayuki ID: 9000021339080

    Osaka Gakuin University (2008 from CiNii)

    Articles in CiNii:1

    • Delayed-ABC SOI for crosstalk noise repair (2008)
  • Terai Masayuki ID: 9000258134744

    Manufacturing Technology Division, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1997 from CiNii)

    Articles in CiNii:1

    • A Fast Eliminating System of Narrow Electron-Beam Exposure-Figures for Improving Pattern Accuracy. (1997)
  • Terai Masayuki ID: 9000258180937

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • Terai Masayuki ID: 9000258181104

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Terai Masayuki ID: 9000258181153

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Terai Masayuki ID: 9000401667981

    Articles in CiNii:1

    • A Fast Eliminating System of Narrow Electron-Beam Exposure-Figures for Improving Pattern Accuracy (1997)
  • Terai Masayuki ID: 9000401735759

    Articles in CiNii:1

    • 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
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