Search Results1-20 of  129

  • Teramoto Akinobu ID: 9000024933713

    Articles in CiNii:1

    • New statistical evaluation method for the variation of metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • Teramoto Akinobu ID: 9000024933834

    Articles in CiNii:1

    • Low leakage current and low resistivity p[+]n diodes on Si(110) fabricated by Ga[+] and B[+] dual ion implantation for low temperature source-drain activation (Special issue: Solid state devices and materials) (2007)
  • Teramoto Akinobu ID: 9000024964224

    Articles in CiNii:1

    • On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Teramoto Akinobu ID: 9000024980504

    Articles in CiNii:1

    • Analysis of the low-frequency noise reduction in Si(100) metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2011)
  • Teramoto Akinobu ID: 9000024980507

    Articles in CiNii:1

    • Impact of channel direction dependent low field hole mobility on (100) orientation silicon surface (Special issue: Solid state devices and materials) (2011)
  • Teramoto Akinobu ID: 9000025017574

    Articles in CiNii:1

    • Experimental investigation of effect of channel doping concentration on random telegraph signal noise (Special issue: Solid state devices and materials) (2010)
  • Teramoto Akinobu ID: 9000025030613

    Articles in CiNii:1

    • Deposition of microcrystalline Si1-x Ge[x] by RF magnetron sputtering on SiO2 substrates (Special issue: Solid state devices and materials) (2009)
  • Teramoto Akinobu ID: 9000025030830

    Articles in CiNii:1

    • A study on very high performance novel balanced fully depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect transistors on Si(110) using accumulation-mode device structure for radio-frequency analog circuits (Special issue: Solid state devices and materials) (2009)
  • Teramoto Akinobu ID: 9000025030915

    Articles in CiNii:1

    • Anomalous random telegraph signal extractions from a very large number of n-metal oxide semiconductor field-effect transistors using test element groups with 0.47Hz-3.0MHZ sampling frequency (Special issue: Solid state devices and materials) (2009)
  • Teramoto Akinobu ID: 9000025031349

    Articles in CiNii:1

    • Complementary metal-oxide-silicon field-effect-transistors featuring atomically flat film/silicon interface (Special issue: Solid state devices and materials) (2009)
  • Teramoto Akinobu ID: 9000025038901

    Articles in CiNii:1

    • Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • Teramoto Akinobu ID: 9000025096327

    Articles in CiNii:1

    • Impact of Improved High-Performance Si(110)-Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices (Special Issue: Solid State Devices & Materials) (2006)
  • Teramoto Akinobu ID: 9000241472926

    Articles in CiNii:1

    • Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species (2013)
  • TERAMOTO Akinobu ID: 9000001622856

    New Industry Creation Hatchery Center, Tohoku University (2010 from CiNii)

    Articles in CiNii:32

    • Adsorption Behavior of Various Fluorocarbon Gases on Silicon Wafer Surface (2005)
    • Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs(Advanced Si Devices) (2005)
    • Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs(Advanced Si Devices) (2005)
  • TERAMOTO Akinobu ID: 9000002166665

    New Industry Creation Hatchery Center, Tohoku Univ. (2004 from CiNii)

    Articles in CiNii:1

    • Control of nitrogen profile in radical nitridation of SiO_2 films (2004)
  • TERAMOTO Akinobu ID: 9000004874889

    ULSI Development Center, Mitsubishi Electric Corporation (2002 from CiNii)

    Articles in CiNii:6

    • Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation (1997)
    • Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide (1999)
    • High Performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing (1998)
  • TERAMOTO Akinobu ID: 9000107306331

    New Industry Creation Hatchery Center, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma (2003)
  • TERAMOTO Akinobu ID: 9000107306481

    New Industry Creation Hatchery Center, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • A Technology for Reducing Flicker Noise for ULSI Applications (2003)
  • TERAMOTO Akinobu ID: 9000107306828

    New Industry Creation Hatchery Center, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • Ferroelectric Sr_2(Ta_<1-x>, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment (2003)
  • TERAMOTO Akinobu ID: 9000107324865

    Articles in CiNii:1

    • Low frequency noise in Si(100) and Si(110) p-channel MOSFETs (2009)
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