Search Results1-20 of  20

  • TSAI Ming-Jinn ID: 9000002170850

    Electronics Research & Service Organization (ERSO), ITRI (2005 from CiNii)

    Articles in CiNii:1

    • A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs (2005)
  • TSAI Ming-Jinn ID: 9000002172523

    Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute (2006 from CiNii)

    Articles in CiNii:1

    • Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory (2006)
  • TSAI Ming-Jinn ID: 9000002174423

    Electronics and Optoelectronics Research Laboratories (EOL) (2007 from CiNii)

    Articles in CiNii:2

    • Characteristics Improvement of Phase Change Memory with Programming Pulse Width (2006)
    • Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming (2007)
  • TSAI Ming-Jinn ID: 9000107313999

    Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (2007 from CiNii)

    Articles in CiNii:1

    • HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications (2007)
  • TSAI Ming-Jinn ID: 9000107380950

    Industrial Technology Research Institute (ITRI) (2012 from CiNii)

    Articles in CiNii:1

    • A 50ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit (2012)
  • Tsai Ming Jinn ID: 9000401805184

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrO$_{x}$/TaO$_{x}$/WO$_{x}$/W Structure (2012)
  • Tsai Ming Jinn ID: 9000402006052

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure (2012)
  • Tsai Ming-Jinn ID: 9000047132414

    Articles in CiNii:1

    • TiO2Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application (2007)
  • Tsai Ming-Jinn ID: 9000058611433

    Articles in CiNii:1

    • Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide (2007)
  • Tsai Ming-Jinn ID: 9000069947294

    Articles in CiNii:1

    • A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation (2008)
  • Tsai Ming-Jinn ID: 9000401767632

    Articles in CiNii:1

    • Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications (2008)
  • Tsai Ming-Jinn ID: 9000401778423

    Articles in CiNii:1

    • Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-kBlocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate (2009)
  • Tsai Ming-Jinn ID: 9000401786780

    Articles in CiNii:1

    • Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing (2010)
  • Tsai Ming-Jinn ID: 9000401805219

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Tsai Ming-Jinn ID: 9000401805255

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrO$_{x}$/GdO$_{x}$/WO$_{x}$/W Structure (2012)
  • Tsai Ming-Jinn ID: 9000402006087

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Tsai Ming-Jinn ID: 9000402006123

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure (2012)
  • Tsai Ming-Jinn ID: 9000402021632

    Articles in CiNii:1

    • A new laterally conductive bridge random access memory by fully CMOS logic compatible process (2014)
  • Tsai Ming-Jinn ID: 9000402022271

    Articles in CiNii:1

    • Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2insertion method (2014)
  • Tsai Ming-Jinn ID: 9000402025422

    Articles in CiNii:1

    • Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications (2014)
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