Search Results1-20 of  25

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  • TSUBOUCHI Nobuteru ID: 9000003331663

    Department of Material Physics, Osaka National Research Institute (2000 from CiNii)

    Articles in CiNii:2

    • Linewidth Study of Electric Dipole induced Spin Resonance in Uniaxially Stressed n-InSb for Far-Infrared Region : Theoretical (2000)
    • Linewidth Study of Electric Dipole Induced Spin Resonance in Uniaxially Stressed n-InSb in Far infrared Regions : Experimental (2000)
  • TSUBOUCHI Nobuteru ID: 9000005649617

    Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology (2002 from CiNii)

    Articles in CiNii:6

    • Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process (2000)
    • Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method (2000)
    • Silicon Carbide Film Growth Using Dual Isotopical ^<28>Si^- and ^<12>C^+ Ion species (2000)
  • TSUBOUCHI Nobuteru ID: 9000252845612

    Osaka National Research Institute, AIST (1995 from CiNii)

    Articles in CiNii:1

    • Microanalysis by high-energy ion microprobe (1995)
  • TSUBOUCHI Nobuteru ID: 9000256745227

    Osaka National Research Institute, AIST (1995 from CiNii)

    Articles in CiNii:1

    • Fundamentals and Present Aspects of Ion Beam Technology. V. Application of Beam. 3. Application of Industries. 3.2 Surface modification by ion implantation. (1995)
  • TSUBOUCHI Nobuteru ID: 9000258206540

    Articles in CiNii:1

    • Development of single-crystalline diamond wafers:- Enlargement of crystal size by microwave plasma CVD and wafer fabrication technology - (2010)
  • TSUBOUCHI Nobuteru ID: 9000258233908

    Diamond Research Laboratory, AIST (2010 from CiNii)

    Articles in CiNii:1

    • Development of single-crystalline diamond wafers:- Enlargement of crystal size by microwave plasma CVD and wafer fabrication technology - (2010)
  • TSUBOUCHI Nobuteru ID: 9000391847750

    National Institute of Advanced Industrial Science and Technology, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions (2003)
  • TSUBOUCHI Nobuteru ID: 9000391847823

    National Institute of Advanced Industrial Science and Technology, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses (2003)
  • Tsubouchi Nobuteru ID: 9000004958865

    National Inst. of Advanced Industrial Science and Technology (AIST) Diamond Research Laboratory (DRL) (2012 from CiNii)

    Articles in CiNii:10

    • A New Machine for Materials Synthesis Using Positive and Negative Ion Deposition (1995)
    • Coaxial Evaporation Source Using Vacuum Arc Dischage (1997)
    • 3. 2 Surface modification by ion implantation. (1995)
  • Tsubouchi Nobuteru ID: 9000025037076

    Articles in CiNii:1

    • Enhancement of dopant activation in B-implanted diamond by high-temperature annealing (2008)
  • Tsubouchi Nobuteru ID: 9000253252699

    Osaka National Research Institute (2000 from CiNii)

    Articles in CiNii:1

    • Silicon Carbide Film Growth Using Dual Isotopical <SUP>28</SUP>Si<SUP>−</SUP> and <SUP>12</SUP>C<SUP>+</SUP> Ion Species (2000)
  • Tsubouchi Nobuteru ID: 9000253252706

    Department of Materials Physics, Osaka National Research Institute, AIST (2000 from CiNii)

    Articles in CiNii:1

    • Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method (2000)
  • Tsubouchi Nobuteru ID: 9000253252712

    Osaka National Research Institute (ONRI), AIST (2000 from CiNii)

    Articles in CiNii:1

    • Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process (2000)
  • Tsubouchi Nobuteru ID: 9000258146870

    Osaka National Research Institute, 1–8–31 Midorigaoka, Ikeda, Osaka 563, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition. (1999)
  • Tsubouchi Nobuteru ID: 9000258154926

    Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Pure 28Si Thin Films Using Isotopically Purified Ion Beams. (2001)
  • Tsubouchi Nobuteru ID: 9000258194533

    Department of Material Physics, Osaka National Research Institute, Midorigaoka 1–8–31, Ikeda, Osaka 563–8577 (2000 from CiNii)

    Articles in CiNii:1

    • Linewidth Study of Electric Dipole Induced Spin Resonance in Uniaxially Stressed n-InSb in Far Infrared Regions. Experimental. (2000)
  • Tsubouchi Nobuteru ID: 9000258194940

    Department of Material Physics, Osaka National Research Institute, Midorigaoka 1–8–31, Ikeda, Osaka 563–8577 (2000 from CiNii)

    Articles in CiNii:1

    • Linewidth Study of Electric Dipole induced Spin Resonance in Uniaxially Stressed n-InSb for Far-Infrared Region. Theoretical. (2000)
  • Tsubouchi Nobuteru ID: 9000283826295

    産総研 (2013 from CiNii)

    Articles in CiNii:1

    • ダイヤモンドパワーデバイス・ウェハの研究状況とCMP への期待(キーノートスピーチ) (2013)
  • Tsubouchi Nobuteru ID: 9000392123059

    AIST (2011 from CiNii)

    Articles in CiNii:1

    • Growth of self-standing CVD diamond single crystals on (001) surface of off-axis HP/HT type _II_a substrates and evaluation of charge collection rate (2011)
  • Tsubouchi Nobuteru ID: 9000401686447

    Articles in CiNii:1

    • Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition (1999)
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