Search Results1-9 of  9

  • Tsukada Dai ID: 9000025016868

    Articles in CiNii:1

    • Epitaxial growth and photoresponse properties of BaSi2 layers toward Si-based high-efficiency solar cells (Special issue: Solid state devices and materials) (2010)
  • Tsukada Dai ID: 9000403852214

    Articles in CiNii:1

    • Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy (2008)
  • Tsukada Dai ID: 9000403856153

    Articles in CiNii:1

    • Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application (2009)
  • TSUKADA Dai ID: 9000016373997

    Institute of Applied Physics, University of Tsukuba (2009 from CiNii)

    Articles in CiNii:3

    • Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi_2 with Impurities Grown by Molecular Beam Epitaxy (2008)
    • Photoresponse Properties of Semiconducting BaSi_2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy (2009)
    • Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method (2009)
  • Tsukada Dai ID: 9000025097199

    Articles in CiNii:1

    • Wet chemical etching and X-ray photoelectron spectroscopy analysis of BaSi2 epitaxial films grown by molecular beam epitaxy (2009)
  • Tsukada Dai ID: 9000401564573

    Articles in CiNii:1

    • Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2with Impurities Grown by Molecular Beam Epitaxy (2008)
  • Tsukada Dai ID: 9000401565780

    Articles in CiNii:1

    • Photoresponse Properties of Semiconducting BaSi2Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy (2009)
  • Tsukada Dai ID: 9000401566240

    Articles in CiNii:1

    • Photoresponse Properties of Polycrystalline BaSi2Films Grown on SiO2Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method (2009)
  • Tsukada Dai ID: 9000401787620

    Articles in CiNii:1

    • Epitaxial Growth and Photoresponse Properties of BaSi2Layers toward Si-Based High-Efficiency Solar Cells (2010)
Page Top