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  • TSUNEMINE Yoshikazu ID: 9000004967312

    Mitsubishi Electric Corporation (1999 from CiNii)

    Articles in CiNii:7

    • Effects of the electrodes on the electrical properties of high-ε capacitors (1999)
    • Impact of the post-anneal procedure on the dielectric response of the BST capacitors (1999)
    • Effects of the Oxidation procedure on the dielectric dissipation of the BST Capacitor (1999)
  • TSUNEMINE Yoshikazu ID: 9000107389137

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Pt/Ba_xSr_<(1-x)>TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory (2004)
  • Tsunemine Yoshikazu ID: 9000025037978

    Articles in CiNii:1

    • Highly reliable Cu interconnect using low-hydrogen silicon nitride film deposited at low temperature as Cu-diffusion barrier (Special issue: Solid state devices and materials) (2008)
  • Tsunemine Yoshikazu ID: 9000253131504

    Department of Applied Chemistry, Faculty of Engineering, Osaka University (1986 from CiNii)

    Articles in CiNii:1

    • CO gas sensitivities of reduced perovskite oxide LaCoO3-x. (1986)
  • Tsunemine Yoshikazu ID: 9000258172339

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 .MU.m Embedded Dynamic Random Access Memory (2004)
  • Tsunemine Yoshikazu ID: 9000283159235

    Articles in CiNii:1

    • Dielectric Properties of (BaxSr1-x)TiO3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application. (1994)
  • Tsunemine Yoshikazu ID: 9000401643350

    Articles in CiNii:1

    • Dielectric Properties of(BaxSr1-x)TiO3Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application (1994)
  • Tsunemine Yoshikazu ID: 9000401725554

    Articles in CiNii:1

    • 2004-05-11 (2004)
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