Search Results1-20 of  119

  • Kazuo Tsutsui ID: 9000024752250

    Articles in CiNii:1

    • THICKENING AND MULTILAMELLAR APPEARANCE OF THE ANTERIOR LENS CAPSULE AND RELATED FACTORS (2004)
  • TSUTSUI KAZUO ID: 9000000926829

    Hitachi, Ltd., Information & Control Systems Division And Industrial Systems Research And Development Center (2001 from CiNii)

    Articles in CiNii:5

    • The Optical Fiber Cable Management System (2001)
    • 湖沼監視のための衛星画像高解像度化手法の開発 (1998)
    • 維持管理情報の上下水道施設改築修繕計画への活用方法 (1998)
  • TSUTSUI KAZUO ID: 9000403817953

    Articles in CiNii:1

    • Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors (2007)
  • TSUTSUI Kazuo ID: 1000060188589

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2000 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Ca_χCd_<1-χ>F_2 Mixed Crystal Films on Si Substrates (2000)
  • TSUTSUI Kazuo ID: 9000000164252

    Hitachi, Ltd. (1998 from CiNii)

    Articles in CiNii:1

    • Pipe Network Analysis estimating the demand of water in real time (1998)
  • TSUTSUI Kazuo ID: 9000000885491

    Department of Ophthalmology, Minamiwakayama National Hospital (1997 from CiNii)

    Articles in CiNii:1

    • A Case of Breast Carcinoma Metastasis to the Optic Nerve (1997)
  • TSUTSUI Kazuo ID: 9000001097986

    Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:3

    • Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes (2003)
    • Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process (2004)
    • Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates (2005)
  • TSUTSUI Kazuo ID: 9000001506521

    Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering (2001 from CiNii)

    Articles in CiNii:1

    • Single Electron Transistor Using GaN Coupled Quantum Dots Formed on SiO_2/Si Substrate (2001)
  • TSUTSUI Kazuo ID: 9000004746148

    Articles in CiNii:45

    • Realization of high throughout probe for near-field optical microscope (1997)
    • Fluoride resonant tunneling diodes fabricated on Si substrate (2009)
    • Feasibility of Si Interfacial Layer Insertion for La_2O_3/Ge MOS Device (2008)
  • TSUTSUI Kazuo ID: 9000004836146

    Engineering Department for Electrical Equipment and System Public and Municipal Systems Division, Hitachi, Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Combined Detection Method in a Sea Surveillance System (2005)
  • TSUTSUI Kazuo ID: 9000005541348

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (1999 from CiNii)

    Articles in CiNii:11

    • Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner (1997)
    • CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111) (1996)
    • Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films (1997)
  • TSUTSUI Kazuo ID: 9000005559652

    Department of Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (1994 from CiNii)

    Articles in CiNii:1

    • Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111) (1994)
  • TSUTSUI Kazuo ID: 9000005560891

    The Graduate School at Nagatsuta, Tokyo Institute of Technology (1994 from CiNii)

    Articles in CiNii:1

    • Sm^<2+> Photoluminescence and X-Ray Scattering Studies of A- and B-Type Epitaxial CaF_2 Layers on Si(111) (1994)
  • TSUTSUI Kazuo ID: 9000005573595

    Department of Applied Electronics, Interdesciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (1996 from CiNii)

    Articles in CiNii:1

    • Effects of Electron Beam Exposure Conditions on the Surface Modification of CaF_2(111)for Heteroepitaxy of GaAs/CaF_2 Structure (1996)
  • TSUTSUI Kazuo ID: 9000005597569

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique (1999)
  • TSUTSUI Kazuo ID: 9000006460078

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2002 from CiNii)

    Articles in CiNii:2

    • Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs (2001)
    • Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs (2002)
  • TSUTSUI Kazuo ID: 9000016498628

    Dept. of Electronics and Applied Physics, Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:3

    • Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics (2004)
    • Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing (2005)
    • Parasitic Effects in Multi-Gate MOSFETs (2007)
  • TSUTSUI Kazuo ID: 9000020771550

    Articles in CiNii:1

    • Study on subacute toxicity of intravenous sorbitan trioleate (STO) in Wistar rats. (1983)
  • TSUTSUI Kazuo ID: 9000107306535

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Heteroepitaxy of Cd-Rich Ca_xCd_<1-x>F_2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes (2003)
  • TSUTSUI Kazuo ID: 9000107333860

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates (2006)
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