Search Results1-20 of  182

  • Uedono Akira ID: 9000018256359

    Articles in CiNii:1

    • Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications) (2011)
  • Uedono Akira ID: 9000019180104

    Articles in CiNii:1

    • Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams (2012)
  • Uedono Akira ID: 9000025121320

    Articles in CiNii:1

    • Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams (2007)
  • Uedono Akira ID: 9000241669366

    Articles in CiNii:1

    • Positron Annihilation Spectroscopy on Nitride-Based Semiconductors (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • Uedono A. ID: 9000403857437

    Articles in CiNii:1

    • Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam (2008)
  • Uedono Akira ID: 9000403857653

    Articles in CiNii:1

    • Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams (2003)
  • Uedono A. ID: 9000403876396

    Articles in CiNii:1

    • Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping (2016)
  • Uedono A. ID: 9000403878593

    Articles in CiNii:1

    • Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment (2016)
  • Uedono Akira ID: 9000403879035

    Articles in CiNii:1

    • Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam (2016)
  • Uedono A. ID: 9000403889189

    Articles in CiNii:1

    • Positron Annihilation Studies on Chemically Synthesized FeCo Alloy (2018)
  • Uedono Akira ID: 9000403940151

    Articles in CiNii:1

    • Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams (2018)
  • Uedono Akira ID: 9000403940174

    Articles in CiNii:1

    • Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam (2018)
  • Uedono A. ID: 9000403940180

    Articles in CiNii:1

    • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN (2018)
  • Uedono Akira ID: 9000403940233

    Articles in CiNii:1

    • Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams (2018)
  • Akira UEDONO ID: 9000403952923

    Articles in CiNii:1

    • Recent Progress in Gas Barrier Thin Film Coatings on PET Bottles in Food and Beverage Applications (2015)
  • Akira UEDONO ID: 9000403961031

    Articles in CiNii:1

    • Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy (2019)
  • UEDONO A. ID: 9000002166623

    Graduate School of Pure and Applied Sciences, Univ. of Tsukuba (2006 from CiNii)

    Articles in CiNii:2

    • Material Selection for the Metal Gate/High-k Transistors (2004)
    • Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON (2006)
  • UEDONO A. ID: 9000002174497

    Institute of Applied Physics, University of Tsukuba (2006 from CiNii)

    Articles in CiNii:1

    • Defects in Electroplated Cu and their Impact on Stress Migration Reliability (2006)
  • UEDONO Akira ID: 9000001719852

    Institute of Applied Physics, University of Tsukuba (2000 from CiNii)

    Articles in CiNii:1

    • Evaluation of SOI Substrates by Positron Annihilation (2000)
  • UEDONO Akira ID: 9000001968153

    Institute of Applied Physics, University of Tsukuba (2006 from CiNii)

    Articles in CiNii:1

    • Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers (2006)
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