Search Results1-8 of  8

  • UNO Shouichi ID: 9000004778792

    Device Development Center, Hitachi, Ltd. (2004 from CiNii)

    Articles in CiNii:6

    • Fabrication of Pt-Gate InP MESFET by In-Situ Electrochemical Process (1995)
    • Control of GaAs Schottky Barrier Height by Si Interface Control Layer and its Application for Quntum Structures (1994)
    • Process integration of low-k organic SOG (k=2.9) for Cu dual-damascene interconnects (2000)
  • UNO Shouichi ID: 9000005718908

    Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University (1997 from CiNii)

    Articles in CiNii:2

    • Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism (1996)
    • Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process (1997)
  • UNO Shouichi ID: 9000017692512

    Department of Laboratory Medicine, Kitano Hospital, The Tazuke Kofukai Medical Research Institute (2008 from CiNii)

    Articles in CiNii:1

    • Mycoplasma hominis meningitis in a neonate (2008)
  • UNO Shouichi ID: 9000107383193

    Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantum Electronics, Hokkaido University (1996 from CiNii)

    Articles in CiNii:1

    • 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs (1996)
  • Uno Shouichi ID: 9000258131311

    Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantum Electronics, Hokkaido University, Sapporo 060, Japan (1996 from CiNii)

    Articles in CiNii:1

    • 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs. (1996)
  • Uno Shouichi ID: 9000258135897

    Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process. (1997)
  • Uno Shouichi ID: 9000401655234

    Articles in CiNii:1

    • 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs (1996)
  • Uno Shouichi ID: 9000401662964

    Articles in CiNii:1

    • Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process (1997)
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