Search Results1-20 of  103

  • Uematsu Masashi ID: 9000403853739

    Articles in CiNii:1

    • Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation (2001)
  • UEMATSU Masashi ID: 9000002172746

    NTT Basic Research Laboratories, NTT Corporation (2006 from CiNii)

    Articles in CiNii:1

    • High-resolution RBS analysis of Si-dielectrics interfaces (2006)
  • UEMATSU Masashi ID: 9000002172951

    NTT Basic Research Laboratories, NTT Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation (2006)
  • UEMATSU Masashi ID: 9000002329967

    (株)フジタ首都圏土木支店土木部 (2000 from CiNii)

    Articles in CiNii:2

    • EFFECTS OF SKEW ANGLE OF CENTER CUTTER BIT OF TUNNEL BORING MACHINE ON STEADY EXCAVATION CHARACTERISTICS OF WEAK ROCK (2000)
    • Effect of skew angle on the wear characteristics of a roller cutter bit of T.B.M.for excavating hard rock mass. (1997)
  • UEMATSU Masashi ID: 9000003518697

    NTT LSI Laboratories. (1992 from CiNii)

    Articles in CiNii:2

    • Damage removal in III-V compound semiconductors via minority carrier injection. (1992)
    • 28a-D-12 Recombination-enhanced impurity diffusion (REID) in Be-doped GaAs (1991)
  • UEMATSU Masashi ID: 9000004777932

    NTT System Electronics Laboratories (1997 from CiNii)

    Articles in CiNii:5

    • Simulation of transient enhanced diffusion (1997)
    • Simulation of B, P, and As diffusion in Si based on an integrated diffusion model (1996)
    • Simulation of transient enhanced diffusion (1997)
  • UEMATSU Masashi ID: 9000005549457

    NTT Basic Research Laboratories, NTT Corporation (2002 from CiNii)

    Articles in CiNii:11

    • Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl (2001)
    • Reduction of the Number of Parameters for the Simulation of Impurity Diffusion (1997)
    • Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon (1998)
  • UEMATSU Masashi ID: 9000005593505

    NTT Basic Research Laboratories (1998 from CiNii)

    Articles in CiNii:1

    • Transient Enhanced Diffusion of Boron in the Presence of Dislocations Produced by Amorphizing Implantation in Silicon (1998)
  • UEMATSU Masashi ID: 9000005596308

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon (1999)
  • UEMATSU Masashi ID: 9000005599370

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Simulation of High-Concentration Boron Diffusion in Silicon during Post-Implantation Annealing (1999)
  • UEMATSU Masashi ID: 9000005601035

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Clustering and Transient Enhanced Diffusion on B Doping Superlattices in Silicon (1999)
  • UEMATSU Masashi ID: 9000005601678

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Simulation of High-Concentration Phosphorus Diffusion in Silicon Taking into Account Phosphorus Clustering and Pile-Up (1999)
  • UEMATSU Masashi ID: 9000005647579

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Influence of Ostwald Ripening of End-of-Range Defects on Transient Enhanced Diffusion in Silicon (1999)
  • UEMATSU Masashi ID: 9000005679801

    NTT System Electronics Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implanation (1997)
  • UEMATSU Masashi ID: 9000016372977

    School of Fundamental Science and Technology, Keio University (2010 from CiNii)

    Articles in CiNii:2

    • Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices (2008)
    • Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation (2010)
  • UEMATSU Masashi ID: 9000045941852

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission (1999)
  • UEMATSU Masashi ID: 9000046421446

    NTT Basic Research Laboratories (2001 from CiNii)

    Articles in CiNii:1

    • Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model (2001)
  • UEMATSU Masashi ID: 9000107308000

    Articles in CiNii:1

    • Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model (2000)
  • UEMATSU Masashi ID: 9000107308104

    Articles in CiNii:1

    • Diffusion Simulation of Ultra-Low-Energy Implanted Boron in Silicon (2000)
  • UEMATSU Masashi ID: 9000107333261

    NTT Basic Research Laboratories, NTT Corporation (2003 from CiNii)

    Articles in CiNii:1

    • The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2 (2003)
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